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TIP100_11 PDF预览

TIP100_11

更新时间: 2024-10-01 08:48:47
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
4页 241K
描述
NPN Plastic Medium-Power Silicon Transistors

TIP100_11 数据手册

 浏览型号TIP100_11的Datasheet PDF文件第2页浏览型号TIP100_11的Datasheet PDF文件第3页浏览型号TIP100_11的Datasheet PDF文件第4页 
M C C  
TIP100  
TIP101  
TIP102  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc  
NPN Plastic  
Medium-Power  
Silicon Transistors  
Low Collector-Emitter Saturation Voltage  
Monolithic Construction with Built-in Base-Emitter Shunt Resistors  
TO-220 Compact package  
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisure Sensitivity Level 1  
Maximum Ratings  
Symbol  
VCEO  
Parameter  
Rating  
60  
80  
100  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
TO-220  
TIP100  
TIP101  
TIP102  
TIP100  
TIP101  
TIP102  
V
V
C
B
S
F
VCBO  
60  
80  
100  
Q
VEBO  
IC  
ICP  
IB  
Emitter-Base Voltage  
Collector Current-continuous  
Collector Current-peak  
Base Current  
5.0  
8.0  
15  
1.0  
V
A
A
T
A
A
U
Collector Dissipation @TC=25OC  
80  
0.64  
-55 to +150  
-55 to +150  
W
1
2
3
PD  
Derate above 25 OC  
Junction Temperature  
Storage Temperature  
W/ OC  
OC  
TJ,  
TSTG  
H
OC  
K
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V
VCEO(SUS)  
Collector-Emitter Sustaining Voltage  
L
J
(IC=30mAdc, IB=0)  
TIP100  
60  
80  
100  
---  
---  
---  
D
TIP101  
TIP101  
Vdc  
R
G
N
ICEO  
Collector Cut-off Current  
(VCE=30Vdc, IB=0)  
(VCE=40Vdc, IB=0)  
TIP100  
TIP101  
TIP102  
---  
---  
---  
50  
50  
50  
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
COLLECTOR  
EMITTER  
uAdc  
(VCE=50Vdc, IB=0)  
ICBO  
Collector Cut-off Current  
(VCB=60Vdc, IE=0)  
TIP100  
TIP101  
TIP102  
---  
---  
---  
50  
50  
50  
uAdc  
mAdc  
----  
(VCB=80Vdc, IE=0)  
(VCB=100Vdc, IE=0)  
Emitter Cut-off Current  
(VBE=5.0Vdc, IC=0)  
IEBO  
DIMENSIONS  
---  
8.0  
INCHES  
MM  
MIN  
14.22  
9.65  
MAX  
15.88  
10.67  
NOTE  
DIM  
A
MIN  
MAX  
.625  
ON CHARACTERISTICS(1)  
.560  
.380  
.140  
hFE(1)  
DC Current Gain  
(IC=3.0Adc, VCE=4.0Vdc)  
(IC=8.0Adc, VCE=4.0Vdc)  
B
C
.420  
.190  
1000  
200  
20000  
---  
3.56  
4.82  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=3.0Adc, IB=6.0mAdc)  
(IC=8.0Adc, IB=80mAdc)  
Base-Emitter On Voltage  
(IC=8.0Adc,VCE=4.0Adc)  
Small-Signal Current Gain  
(IC=3.0Adc,VCE=4.0Vdc,f=1.0MHz)  
Output Capacitance  
G
H
J
---  
---  
2.0  
2.5  
Vdc  
Vdc  
---  
.012  
0.30  
VBE(ON)  
hfe  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
---  
4.0  
---  
2.8  
---  
N
.190  
.210  
4.83  
5.33  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
Cob  
(VCB=10V, IE=0, f=0.1MHz)  
200  
pF  
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
.045  
1.15  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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