THD215HI

更新时间： 2024-02-11 13:00:12

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
6页	68K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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数据手册

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THD215HI 数据手册

THD215HI

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

HIGH VOLTAGE CAPABILITY

U.L. RECOGNISED ISOWATT218 PACKAGE

(U.L. FILE # E81734 (N)).

APPLICATIONS

■

HORIZONTAL DEFLECTION FOR COLOUR

TV AND MONITORS

DESCRIPTION

This device is manufactured using Multiepitaxial

Mesa technology for cost-effective high

performance and uses a Hollow Emitter structure

to enhanceswitching speeds.

ISOWATT218

The THD series is designed for use in horizontal

deflection circuits in televisionsand monitors.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

1500

700

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

T_stg

T_j

Total Dissipation at T_c= 25 C

^oC

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

December 1999

12 3 4 5 6

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