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TH74KB27AVWKRPGD/T

更新时间： 2024-01-24 15:21:52
品牌 Logo 应用领域
爱特美尔 - ATMEL ATM异步传输模式传感器换能器
页数 文件大小 规格书
20页 1122K
描述
CCD Sensor, 2.50V, Square, Surface Mount, CERAMIC, J LEAD PACKAGE-84

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TH74KB27AVWKRPGD/T 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.03阵列类型：LINEAR
主体长度或直径：30.22 mm动态范围：10000 dB
外壳：CERAMIC, METAL-SEALED COFIRED安装特点：SURFACE MOUNT
最大工作电流：1 mA输出范围：2.50V
输出类型：DIGITAL VOLTAGE封装形状/形式：SQUARE
像素大小：26 µm传感器/换能器类型：IMAGE SENSOR,CCD
光谱响应 (nm)：800-1700最大供电电压：18.5 V
最小供电电压：17.5 V表面贴装：YES
端接类型：SOLDERBase Number Matches：1

TH74KB27AVWKRPGD/T 数据手册

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TH7426A/27A  
ABSOLUTE MAXIMUM RATINGS  
Supply voltages (compare to Vss, at any pin)  
Transient voltages (compare to Vss, at any pin)  
DC current (at any pin),  
0 to +20V  
0 to +25V  
10mA  
Except  
except  
- thermoelectric cooler pins  
- temperature sensor  
6A  
+/-3mA  
Operating temperature (temperature variation limited to 6°C/min)  
Storage temperature (temperature variation limited to 6°C/min)  
Electrostatic discharge sensitivity, MIL-STD-883 method 3015  
-40 to +85°C  
-40 to +85°C  
device Class 1  
Stresses above those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent devices failure. Functionality at  
or above these limits is not implied. Exposure to maximum ratings for extended periods may affect device reliability.  
To avoid any performance degradation,the device must be handled with grounded bracelet and stored in the conductive  
packing used for shipment.  
TABLE 1 - ELECTRO-OPTICAL CHARACTERISTICS  
15°C internal operating temperature, 3ms integration time, typical voltage input (otherwise specified).  
Parameter  
Symbol  
TH 7426  
Typ.  
TH 7427  
Typ.  
Unit  
Remarks  
Min.  
Max.  
Min  
Max.  
Dark voltage signal  
mean  
VD  
3
4
mV  
mV  
pA  
See Fig. 6  
isolated pixels  
(photodiode dark current)  
100  
120  
( ID)  
0.6  
0.8  
See note (1)  
Noise in darkness  
mean  
(rms)  
200  
200  
µV  
mV  
σVD  
isolated pixels  
1
1.2  
Absolute photo response  
mean  
R
10  
1
15  
1
Vcm²/µJ See Fig. 3-4-5  
non uniformity  
PRNU  
+/-10  
1.73  
+/-10  
173  
%
%
non linearity over 1.5V range  
Spectral response  
Cut-off wavelength  
Temperature shift  
1.66  
1.68  
1.1  
1.66  
1.68  
1.1  
µm  
λc  
dλc/dT  
At 50% R(λ)  
max  
nm/°C  
Modulation transfer function  
across array  
MTF  
Vsat  
NEP  
D*  
At 19.2 lp/mm  
See note (2)  
0.35  
0.55  
0.50  
0.68  
0.54  
0.73  
0.35  
0.35  
0.50  
0.50  
0.54  
0.54  
along array  
Output saturation voltage  
2.5  
2.5  
V
Depends on  
preload level.  
See Fig. 7  
Noise equivalent power at  
λ=1.65µm  
0.35  
40  
6.7  
0.35  
40  
4.4  
fW  
fW  
BW=1Hz  
BW=167Hz  
nWcm-2 BW=167Hz  
5.1012  
8.1011  
6.1012  
1.1012  
cmHz1/2W-1 BW=1Hz  
Specific detectivity at λ=1.65µm  
cmHz1/2W-1 BW=167Hz  
Electron to voltage conversion factor  
Quantum efficiency  
Fc  
QE  
0.26  
0.8  
0.26  
0.8  
µV/e  
e/ph  
See Fig. 5  
Image grade  
(number of blemishes)  
J
K
O
E
1
5
10  
NA  
1
5
10  
NA  
See note (3)  
Electrical sample  
Note : 1 Already taken into account in mean VD (VD = Id TI Fc ; TI=Integration time ; q = 1.6 10-19 C)  
q
Note : 2 “Maximum value” is the theoretical value computed using the corresponding diode size  
Note : 3 a pixel is considered as a blemish if :  
or  
or  
or  
- its dark voltage is higher than isolated pixel max value  
- its noise is higher than isolated pixel noise max value  
- its PRNU is higher than +/- 10 %  
3/20  
1234567...20

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