TH7426A/27A
ABSOLUTE MAXIMUM RATINGS
Supply voltages (compare to Vss, at any pin)
Transient voltages (compare to Vss, at any pin)
DC current (at any pin),
0 to +20V
0 to +25V
10mA
Except
except
- thermoelectric cooler pins
- temperature sensor
6A
+/-3mA
Operating temperature (temperature variation limited to 6°C/min)
Storage temperature (temperature variation limited to 6°C/min)
Electrostatic discharge sensitivity, MIL-STD-883 method 3015
-40 to +85°C
-40 to +85°C
device Class 1
Stresses above those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent devices failure. Functionality at
or above these limits is not implied. Exposure to maximum ratings for extended periods may affect device reliability.
To avoid any performance degradation,the device must be handled with grounded bracelet and stored in the conductive
packing used for shipment.
TABLE 1 - ELECTRO-OPTICAL CHARACTERISTICS
15°C internal operating temperature, 3ms integration time, typical voltage input (otherwise specified).
Parameter
Symbol
TH 7426
Typ.
TH 7427
Typ.
Unit
Remarks
Min.
Max.
Min
Max.
Dark voltage signal
mean
VD
3
4
mV
mV
pA
See Fig. 6
isolated pixels
(photodiode dark current)
100
120
( ID)
0.6
0.8
See note (1)
Noise in darkness
mean
(rms)
200
200
µV
mV
σVD
isolated pixels
1
1.2
Absolute photo response
mean
R
10
1
15
1
Vcm²/µJ See Fig. 3-4-5
non uniformity
PRNU
+/-10
1.73
+/-10
173
%
%
non linearity over 1.5V range
Spectral response
Cut-off wavelength
Temperature shift
1.66
1.68
1.1
1.66
1.68
1.1
µm
λc
dλc/dT
At 50% R(λ)
max
nm/°C
Modulation transfer function
across array
MTF
Vsat
NEP
D*
At 19.2 lp/mm
See note (2)
0.35
0.55
0.50
0.68
0.54
0.73
0.35
0.35
0.50
0.50
0.54
0.54
along array
Output saturation voltage
2.5
2.5
V
Depends on
preload level.
See Fig. 7
Noise equivalent power at
λ=1.65µm
0.35
40
6.7
0.35
40
4.4
fW
fW
BW=1Hz
BW=167Hz
nWcm-2 BW=167Hz
5.1012
8.1011
6.1012
1.1012
cmHz1/2W-1 BW=1Hz
Specific detectivity at λ=1.65µm
cmHz1/2W-1 BW=167Hz
Electron to voltage conversion factor
Quantum efficiency
Fc
QE
0.26
0.8
0.26
0.8
µV/e
e/ph
See Fig. 5
Image grade
(number of blemishes)
J
K
O
E
1
5
10
NA
1
5
10
NA
See note (3)
Electrical sample
Note : 1 Already taken into account in mean VD (VD = Id TI Fc ; TI=Integration time ; q = 1.6 10-19 C)
q
Note : 2 “Maximum value” is the theoretical value computed using the corresponding diode size
Note : 3 a pixel is considered as a blemish if :
or
or
or
- its dark voltage is higher than isolated pixel max value
- its noise is higher than isolated pixel noise max value
- its PRNU is higher than +/- 10 %
3/20