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TFZTR12B PDF预览

TFZTR12B

更新时间: 2024-01-10 07:46:31
品牌 Logo 应用领域
罗姆 - ROHM 测试光电二极管
页数 文件大小 规格书
9页 2242K
描述
Zener Diode

TFZTR12B 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79其他特性:HIGH RELIABILITY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.5 W标称参考电压:12 V
表面贴装:YES技术:ZENER
端子形式:FLAT端子位置:DUAL
最大电压容差:2.51%工作测试电流:10 mA
Base Number Matches:1

TFZTR12B 数据手册

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General Precaution  
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.  
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s  
representative.  
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way ponsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or rors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

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