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TEA1610P/N5 PDF预览

TEA1610P/N5

更新时间: 2024-10-01 14:45:07
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
21页 111K
描述
IC,ZERO-CROSSING DETECTOR,MOS,DIP,16PIN,PLASTIC

TEA1610P/N5 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:DIP, DIP16,.3Reach Compliance Code:compliant
风险等级:5.83Is Samacsys:N
JESD-30 代码:R-PDIP-T16端子数量:16
最高工作温度:70 °C最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP16,.3封装形状:RECTANGULAR
封装形式:IN-LINE电源:13 V
认证状态:Not Qualified子类别:Other Analog ICs
标称供电电压 (Vsup):13 V表面贴装:NO
技术:MOS温度等级:OTHER
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

TEA1610P/N5 数据手册

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TEA1610P; TEA1610T  
Zero-voltage-switching resonant converter controller  
Rev. 02 — 6 February 2007  
Product data sheet  
1. General description  
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion  
Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a  
zero-voltage switching resonant converter. The IC provides the drive function for  
two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift  
circuit, an oscillator with accurately-programmable frequency range, a latched shut-down  
function and a transconductance error amplifier.  
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through  
a divide-by-two flip-flop before being fed to the output drivers.  
The circuit is very flexible and enables a broad range of applications for different mains  
voltages.  
V
HS  
V
DD  
bridge voltage  
supply  
(high side)  
MOSFET  
SWITCH  
HALF-  
BRIDGE  
CIRCUIT  
TEA1610  
RESONANT  
CONVERTER  
mgu336  
signal  
ground  
power ground  
Fig 1. Basic configuration  
2. Features  
I Integrated high voltage level-shift  
I Transconductance error amplifier for  
function  
ultra high-ohmic regulation feedback  
I Integrated high voltage bootstrap diode I Latched shut-down circuit for  
overcurrent and overvoltage protection  
I Adjustable minimum and maximum  
I Low start-up current (green function)  
I Adjustable dead time  
frequencies  
I Undervoltage lockout  

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