Datasheet > TEA1612T/N1,518

TEA1612T/N1,518

更新时间： 2024-10-01 21:13:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	109K
描述
Zero voltage switching resonant converter controller

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数据手册

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TEA1612T/N1,518 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TEA1612T/N1,518 数据手册

TEA1612T

Zero voltage switching resonant converter controller

Rev. 01 — 24 September 2009

Product data sheet

1. General description

The TEA1612T is a monolithic integrated circuit implemented in a high-voltage double

Diffused Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage

controller for a zero-voltage switching resonant converter. The IC provides the drive

function for two discrete power MOSFETs in a half-bridge conﬁguration. It also includes a

level-shift circuit, an oscillator with an accurately-programmable frequency range, a

latched shut-down function, burst mode operation and a transconductance error ampliﬁer.

The oscillator signal passes through a divide-by-two ﬂip-ﬂop before being fed to the output

drivers in order to guarantee an accurate 50 % switching duty factor.

The circuit is very ﬂexible and enables a broad range of applications for different mains

voltages.

drv(hs)

bridge voltage

supply

(high side)

MOSFET

SWITCH

HALF-

BRIDGE

CIRCUIT

RESONANT

CONVERTER

TEA1612T

signal

ground

power ground

014aaa825

Fig 1. Basic conﬁguration

2. Features

I Adjustable burst mode operation at low loads for low standby power

I Integrated high voltage level-shift function

I Integrated high voltage bootstrap diode

I Low start-up current

I Adjustable non-overlap time

I Internal Over Temperature Protection (OTP)

I Over Current Protection (OCP) that activates a shut-down timer

12 3 4 5 6 7...19

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