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TCR2DG125 PDF预览

TCR2DG125

更新时间: 2022-12-29 21:32:29
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
15页 362K
描述
Low Noise 200 mA CMOS Low Drop-Out Regulator in ultra small package

TCR2DG125 数据手册

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TCR2DG series  
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic  
TCR2DG series  
Low Noise 200 mA CMOS Low Drop-Out Regulator in ultra small package  
The TCR2DG series are CMOS general-purpose single-output  
voltage regulators with an on/off control input, featuring low dropout  
voltage, low quiescent bias current and fast load transient response.  
These voltage regulators are available in fixed output voltages  
between 1.2 V and 3.6 V and capable of driving up to 200 mA. They  
feature overcurrent protection and thermal shut down function.  
The TCR2DG series is offered in the ultra small package WCSP4  
( 0.79 mm x 0.79 mm x 0.5 mm). It has a low dropout voltage of 75  
mV ( 2.5 V output, IOUT = 100 mA) with low output noise voltage of 18  
μV  
(2.5 V output) and a load transient response of only  
WCSP4  
rms  
VOUT = ±65 mV ( IOUT = 1 mA150 mA, COUT =1.0 μF).  
As small ceramic input and output capacitors can be used with the  
Weight : 0.7 mg (typ.)  
TCR2DG series, these devices are ideal for portable applications that require high-density board assembly such as  
cellular phones.  
Features  
Low Drop-out Voltage ( VIN-VOUT = 75 mV (typ.) at 2.5 V-output, IOUT = 100 mA )  
Low quiescent bias current ( IB = 45 μA (typ.) at IOUT = 0 mA )  
Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode )  
Low output noise voltage  
V
NO = 22 μV  
NO = 18 μV  
(typ.) at 3.0 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz  
(typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz  
(typ.) at 1.2 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz  
rms  
rms  
rms  
V
VNO = 14 μV  
High ripple rejection ratio  
R.R = 75 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =1kHz  
R.R = 62 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =10kHz  
R.R = 50 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =100kHz  
Fast load transient response (VOUT = ±65 mV (typ.) at IOUT = 1mA 150 mA, COUT =1.0 μF )  
Output voltage accuracy ±1.0 %  
Over current protection  
Thermal shut down function  
Built-in inrush current reduction circuit  
Pull down connection between CONTROL and GND  
Ceramic capacitors can be used ( CIN = 0.47μF, COUT =1.0 μF )  
Ultra small package, WCSP4 ( 0.79 mm x 0.79 mm x 0.50 mm )  
Pin Assignment (top view)  
CONTROL  
V
IN  
(B2)  
(A2)  
Start of commercial production  
V
OUT  
(B1)  
GND  
(A1)  
2013-01  
1
2014-03-01  

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