型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TCC1206X7R682K102FT | CCTC |
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电容容值:6.8nF;电容容差:±10%;额定电压:1kV; |
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TCC1206X7R682K500DT | CCTC |
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电容容值:;电容容差:;额定电压:;温度特性:; |
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TCC1206X7R682K500DTS | CCTC |
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电容容值:6.8nF;元器件封装:1206;电容容差:±10%;额定电压:50V; |
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TCC1206X7R683K500DT | CCTC |
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电容容值:68nF;电容容差:±10%;额定电压:50V; |
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TCC1206X7R684K500FT | CCTC |
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电容容值:680nF;电容容差:±10%;额定电压:50V; |
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TCC1210X7R104K251FT | CCTC |
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电容容值:100nF;电容容差:±10%;额定电压:250V; |
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TCC1210X7R105K101HT | CCTC |
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电容容值:1uF;电容容差:±10%;额定电压:100V; |
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TCC1812X7R224K451GT | CCTC |
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电容容值:220nF;元器件封装:1812;电容容差:±10%;额定电压:450V; |
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TCC1812X7R471K102FT | CCTC |
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电容容值:470pF;元器件封装:1812;电容容差:±10%;额定电压:1kV; |
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TCC2023-16 | MICROSEMI |
获取价格 |
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, 0.397 X 0.397 INCH, HERMETIC |
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