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TC7W240FUTE12L PDF预览

TC7W240FUTE12L

更新时间: 2024-09-25 15:54:03
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
6页 148K
描述
IC DRIVER, Bus Driver/Transceiver

TC7W240FUTE12L 技术参数

生命周期:Active包装说明:LSSOP,
Reach Compliance Code:unknown风险等级:5.7
系列:HC/UHJESD-30 代码:R-PDSO-G8
长度:2.9 mm逻辑集成电路类型:BUS DRIVER
位数:1功能数量:2
端口数量:2端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:INVERTED
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
传播延迟(tpd):165 ns座面最大高度:1.3 mm
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:2.8 mm
Base Number Matches:1

TC7W240FUTE12L 数据手册

 浏览型号TC7W240FUTE12L的Datasheet PDF文件第2页浏览型号TC7W240FUTE12L的Datasheet PDF文件第3页浏览型号TC7W240FUTE12L的Datasheet PDF文件第4页浏览型号TC7W240FUTE12L的Datasheet PDF文件第5页浏览型号TC7W240FUTE12L的Datasheet PDF文件第6页 
TC7W240FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7W240FU  
Inverted, 3-State Outputs  
2
The TC7W240FU is a high speed C MOS Dual Bus Buffers  
2
fabricated with silicon gate C MOS technology.  
It achieves the high speed operation similar to equivalent  
2
LSTTL while maintaining the C MOS low power dissipation.  
It is an inverting 3-state buffer having two active-low output  
enables.  
All inputs are equipped with protection circuits against static  
discharge or transient excess voltage.  
Weight: 0.02 g (typ.)  
Features  
High speed: t = 10 ns (typ.) at V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 2 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Output drive capability: 15 LSTTL loads  
Symmetrical output impedance: |I | = I  
= 6 mA (min)  
OL  
OH  
Balanced propagation delays: t  
t
pHL  
pLH  
Wide operating voltage range: V  
(opr) = 2 to 6 V  
CC  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage range  
Symbol  
Rating  
Unit  
V
0.5 to 7  
V
V
CC  
DC input voltage  
V
0.5 to V  
+ 0.5  
IN  
CC  
CC  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5 to V  
+ 0.5  
V
OUT  
I
±20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
±20  
±35  
OK  
I
OUT  
DC V /ground current  
CC  
I
±37.5  
300  
CC  
Power dissipation  
P
D
Storage temperature range  
Lead temperature (10 s)  
T
stg  
65 to 150  
T
L
260  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1993-04  
1
2014-03-01  

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