Datasheet > TC5117400BSJ

TC5117400BSJ

更新时间： 2024-02-08 05:34:54

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
21页	1109K
描述
4,194,304 WORD X 4 BIT DYNAMIC RAM

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中文翻译

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数据手册

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TC5117400BSJ 数据手册

TOSHIBA

TC5117400BSJ/BST-60/70

PRELIMINARY

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti-

lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

both internally and to the system user. Multiplexed address inputs permit the TC5117400BSJ/BST to be packaged in a 26/24 pin

plastic SOJ (300mil), and 26/24 pin plastic TSOP (300mil). The package size provides high system bit densities and is compatible

with widely available automated testing and insertion equipment. System oriented features include single power supply of 5V± 10%

tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

Features

Key Parameters

• 4,194,304 word by 4 bit organization

• Fast access time and cycle time

• Single power supply of 5V± 10% with a built-in

TC5117400BSJ/BST

ITEM

-60

-70

generator

RAS Access Time

60ns

70ns

• Low Power

RAC

- 605mW MAX. Operating

- (TC5117400BSJ/BST-60)

- 523mW MAX. Operating

- (TC5117400BSJ/BST-70)

- 5.5mW MAX. Standby

Column Address

Access Time

30ns

35ns

CAS Access Time

Cycle Time

15ns

20ns

CAC

110ns

130ns

Fast Page Mode

Cycle Time

• Outputs unlatched at cycle end allows two-

dimensional chip selection

40ns

45ns

• Common I/O capability using “EARLY WRITE”

operation

• Read-Modify-Write, CAS before RAS refresh,

RAS-only refresh, Hidden refresh, Fast Page

Mode and Test Mode capability

• All inputs and outputs TTL compatible

• 2048 refresh cycles/32ms

• Package

TC5117400BSJ: SOJ26-P-300C

TC5117400BST: TSOP26-P-300D

1. This technical data may be controlled under U.S. Export Administration Regulations and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export or re-export, directly or indi-

rectly, in contravention of the U.S. Export Administration Regulations is strictly prohibited.

2. LIFE SUPPORT POLICY

Toshiba products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate ofﬁcer of Toshiba America, Inc. Life support sys-

tems are either systems intended for surgical implant in the body or systems which sustain life.

A critical component in any component of a life support system whose failure to perform may cause a malfunction of the life support system, or may affect its safety or effectiveness.

3. The information in this document has been carefully checked and is believed to be reliable; however no responsibility can be assumed for inaccuracies that may not have been caught. All information in this data book

is subject to change without prior notice. Furthermore, Toshiba cannot assume responsibility for the use of any license under the patent rights of Toshiba or any third parties.

TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.

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与TC5117400BSJ相关器件

型号	品牌	获取价格	描述	数据表
TC5117400BSJ-50	TOSHIBA	获取价格	IC 4M X 4 FAST PAGE DRAM, 50 ns, Dynamic RAM
TC5117400BSR-70	TOSHIBA	获取价格	IC 4M X 4 FAST PAGE DRAM, 70 ns, Dynamic RAM
TC5117400BST-60	TOSHIBA	获取价格	4,194,304 WORD X 4 BIT DYNAMIC RAM
TC5117400BST-70	TOSHIBA	获取价格	4,194,304 WORD X 4 BIT DYNAMIC RAM
TC5117400BTR-60	TOSHIBA	获取价格	IC 4M X 4 FAST PAGE DRAM, 60 ns, Dynamic RAM
TC5117400BTR-70	TOSHIBA	获取价格	IC 4M X 4 FAST PAGE DRAM, 70 ns, Dynamic RAM
TC5117400BVK-50	TOSHIBA	获取价格	IC 4M X 4 OTHER DRAM, 50 ns, PDSO24, TSOP2-24, Dynamic RAM
TC5117400BVK-60	TOSHIBA	获取价格	IC 4M X 4 OTHER DRAM, 60 ns, PDSO24, TSOP2-24, Dynamic RAM
TC5117400BZ-60	TOSHIBA	获取价格	IC 4M X 4 OTHER DRAM, 60 ns, PZIP24, ZIP-24, Dynamic RAM
TC5117400BZ-70	TOSHIBA	获取价格	IC 4M X 4 OTHER DRAM, 70 ns, PZIP24, ZIP-24, Dynamic RAM

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