Datasheet > TC426

TC426

更新时间： 2024-02-09 04:24:02

品牌	Logo	应用领域
TELCOM		驱动器
页数	文件大小	规格书
5页	78K
描述
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

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TC426 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DIP
包装说明：	DIP,	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.03
高边驱动器：	YES	接口集成电路类型：	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：	R-GDIP-T8	JESD-609代码：	e3
长度：	9.78 mm	功能数量：	2
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-55 °C	标称输出峰值电流：	1.5 A
封装主体材料：	CERAMIC, GLASS-SEALED	封装代码：	DIP
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	5.08 mm	最大供电电压：	18 V
最小供电电压：	4.5 V	表面贴装：	NO
技术：	CMOS	温度等级：	MILITARY
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	断开时间：	0.12 µs
接通时间：	0.075 µs	宽度：	7.62 mm
Base Number Matches：	1

TC426 数据手册

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

TC426

TC427

TC428

operation of the device at these or any other conditions above those

indicated in the operational sections of the specifications is not implied.

Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay

effect device reliability.

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only, and functional

SUPPLY BYPASSING

Charging and discharging large capacitive loads quickly

requires large currents. For example, charging a 1000-pF

load to18V in 25nsec requires an 0.72A current from the

device power supply.

To guarantee low supply impedance over a wide fre-

quency range, a parallel capacitor combination is recom-

mended for supply bypassing. Low-inductance ceramic

disk capacitors with short lead lengths (< 0.5 in.) should be

used. A 1 µF film capacitor in parallel with one or two

0.1 µF ceramic disk capacitors normally provides adequate

bypassing.

The TC426/427/428 CMOS drivers have greatly re-

duced quiescent DC power consumption. Maximum quies-

cent current is 8 mA compared to the DS0026 40 mA

specification. For a 15V supply, power dissipation is typi-

cally 40 mW.

Two other power dissipation components are:

• Output stage AC and DC load power.

• Transition state power.

Output stage power is:

Po = P_DC+ PAC

GROUNDING

= Vo (I_DC) + f C_LV_S

The TC426 and TC428 contain inverting drivers. Ground

potential drops developed in common ground impedances

from input to output will appear as negative feedback and

degrade switching speed characteristics.

Individual ground returns for the input and output

circuits or a ground plane should be used.

Where:

Vo = DC output voltage

I_DC= DC output load current

= Switching frequency

Vs = Supply voltage

In power MOSFET drive applications the P_DCterm is

negligible. MOSFET power transistors are high imped-

ance, capacitive input devices. In applications where resis-

tive loads or relays are driven, the P_DCcomponent will

normally dominate.

INPUT STAGE

The input voltage level changes the no-load or quies-

cent supply current. The N-channel MOSFET input stage

transistor drives a 2.5mA current source load. With a logic

"1" input, the maximum quiescent supply current is 8 mA.

Logic "0" input level signals reduce quiescent current to

0.4 mA maximum. Minimum power dissipation occurs for

logic "0" inputs for the TC426/427/428. Unused driver

inputs must be connected to V_DDor GND.

The drivers are designed with 100 mV of hysteresis.

This provides clean transitions and minimizes output stage

current spiking when changing states. Input voltage thresh-

olds are approximately 1.5V, making the device TTL com-

patible over the 4.5V to 18V supply operating range. Input

current is less than 1 µA over this range.

The magnitude of P_ACis readily estimated for several

cases:

1. f

= 20kHZ

1. f

= 200kHz

2. C_L=1000pf

3. VS =15V

2. C_L=1000pf

3. Vs = 18V

4. P_AC= 65mW

4. P_AC= 45mW

During output level state changes, a current surge will

flow through the series connected N and P channel output

MOSFETS as one device is turning "ON" while the other is

turning "OFF". The current spike flows only during output

transitions. The input levels should not be maintained be-

tween the logic "0" and logic "1" levels. Unused driver

inputs must be tied to ground and not be allowed to

float. Average power dissipation will be reduced by mini-

mizing input rise times. As shown in the characteristic

curves, average supply current is frequency dependent.

The TC426/427/428 may be directly driven by the

TL494, SG1526/1527, SG1524, SE5560, and similar switch-

mode power supply integrated circuits.

POWER DISSIPATION

The supply current vs frequency and supply current vs

capacitive load characteristic curves will aid in determining

power dissipation calculations.

TELCOM SEMICONDUCTOR, INC.

4-171

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