Datasheet > TC2996A

TC2996A

更新时间： 2024-01-02 03:31:52

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
3页	73K
描述
1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

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TC2996A 数据手册

TC2996A

REV1_20070503

1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

FEATURES

• 12 W Typical Power at 1.6 GHz

• 13 dB Typical Linear Power Gain at 1.6 GHz

• High Linearity:IP3 = 50 dBm Typical

• High Power Added Efficiency:Nominal PAE of 40 %

• Suitable for High Reliability Application

• Wg = 30 mm

PHOTO ENLARGEMENT

• 100 % DC and RF Tested

• Flange Ceramic Package

DESCRIPTION

The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power

transistor with input prematched circuits. The flange ceramic package provides the best thermal

conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.

Typical applications include high dynamic range power amplifiers for commercial applications.

ELECTRICAL SPECIFICATIONS ( V^DS= 10.5, I^DS= 2.5A @ 1.6GHz )

MIN

39.5

TYP

MAX

UNIT

dBm

Symbol

P_1dB

G_L

CONDITIONS

Output Power at 1dB Gain Compression Point

Linear Power Gain

dBm

IP3

Intercept Point of the 3^rd-order Intermodulation, *P_SCL= 28 dBm

Power Added Efficiency at 1dB Compression Power

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

PAE

I_DSS

g_m

7.5

5400

-1.7

Volts

°C/W

V_P

Pinch-off Voltage at V_DS= 2 V, I_D= 60 mA

BV_DGODrain-Gate Breakdown Voltage at I_DGO=15 mA

R_thThermal Resistance

* P_SCL: Output Power of Single Carrier Level.

1.5

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

P 1 / 3

Fax: 886-6-5051602

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与TC2996A相关器件

型号	品牌	获取价格	描述	数据表
TC2996B	TRANSCOM	获取价格	1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
TC2996D	TRANSCOM	获取价格	2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
TC2997A	TRANSCOM	获取价格	1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
TC2997B	TRANSCOM	获取价格	1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
TC2997C	TRANSCOM	获取价格	2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
TC2997D	TRANSCOM	获取价格	2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
TC2997G	TRANSCOM	获取价格	3.5 GHz 16WFlange Ceramic Packaged GaAs Power FETs
TC2998E	TRANSCOM	获取价格	2.5-2.7GHz 20W Packaged GaAs Power FETs
TC2998F	TRANSCOM	获取价格	2.7-2.9GHz 20W Packaged GaAs Power FETs
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