Datasheet > TC2996B

TC2996B

更新时间： 2024-02-25 14:54:15

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
3页	77K
描述
1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

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TC2996B 数据手册

TC2996B

REV1_20070503

1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

FEATURES

PHOTO ENLARGEMENT

• 12 W Typical Power at 1.9 GHz

• 13 dB Typical Linear Power Gain at 1.9 GHz

• High Linearity: IP3 = 50 dBm Typical

• High Power Added Efficiency: Nominal PAE of 40 %

• Suitable for High Reliability Application

• Lg = 1 µm, Wg = 30 mm

• 100 % DC and RF Tested

• Flange Ceramic Package

DESCRIPTION

The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power

transistor with input prematched circuits. The flange ceramic package provides the best thermal

conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.

Typical applications include high dynamic range power amplifiers for commercial applications.

ELECTRICAL SPECIFICATIONS (@ 1.9 GHz)

SYMBOL

P_1dB

G_L

CONDITIONS

Output Power at 1dB Gain Compression Point V_DS= 10 V, I_DS= 2.5A

Linear Power Gain V_DS= 10 V, I_DS= 2.5A

MIN

39.5

TYP

41.0

MAX

UNIT

dBm

IP3

Intercept Point of the 3^rd-order Intermodulation, V_DS= 10 V, I_DS= 2.5A, *P_SCL= 28 dBm

Power Added Efficiency at 1dB Compression Power

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

PAE

I_DSS

7.5

5400

-1.7

g_m

Volts

V_P

Pinch-off Voltage at V_DS= 2 V, I_D= 60 mA

BV_DGODrain-Gate Breakdown Voltage at I_DGO=15 mA

R_thThermal Resistance

* P_SCL: Output Power of Single Carrier Level.

1.5

C/W

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

P 1 / 3

Fax: 886-6-5051602

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