Datasheet > TC2998F

TC2998F

更新时间： 2024-10-02 06:15:43

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
2页	68K
描述
2.7-2.9GHz 20W Packaged GaAs Power FETs

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TC2998F 数据手册

TC2998F

- Preliminary Datasheet -

FEATURES

PRE.3_01/21/2008

2.7-2.9GHz 20W Packaged GaAs Power FETs



20 W Typical Power

10 dB Typical Linear Power Gain

High Linearity:

IP3 = 52 dBm Typical



High Power Added Efficiency:

Nominal PAE of 37 %

100 % DC and RF Tested

DESCRIPTION

The TC2998F is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

The ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC

and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier

for commercial applications.

ELECTRICAL SPECIFICATIONS

MIN

TYP

MAX

UNIT

Symbol

CONDITIONS

2.7

2.9

GHz

FREQ

Operating Frequency

Output Power at 1dB Gain Compression Point,

Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz

Linear Power Gain

dBm

P_1dB

G_L

Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz

Intercept Point of the 3^rd-order Intermodulation, Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz,

*P_SCL= 31 dBm

dBm

IP3

18.75

13500

-1.7

Volts

C/W

PAE

I_DSS

g_m

V_P

BV_DGO

R_th

Power Added Efficiency at 1dB Compression Power

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

Pinch-off Voltage at V_DS= 2 V, I_D= 60 mA

Drain-Gate Breakdown Voltage at I_DGO=15 mA

Thermal Resistance

0.6

* P_SCL: Output Power of Single Carrier Level, delta frequency=5MHz.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

P 1 / 2

Fax: 886-6-5051602

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