5秒后页面跳转
TC245 PDF预览

TC245

更新时间: 2024-02-15 03:14:58
品牌 Logo 应用领域
德州仪器 - TI 传感器图像传感器
页数 文件大小 规格书
19页 471K
描述
786- 】 488-pixel ccd image sensor

TC245 数据手册

 浏览型号TC245的Datasheet PDF文件第2页浏览型号TC245的Datasheet PDF文件第3页浏览型号TC245的Datasheet PDF文件第4页浏览型号TC245的Datasheet PDF文件第5页浏览型号TC245的Datasheet PDF文件第6页浏览型号TC245的Datasheet PDF文件第7页 
TC245  
786- × 488-PIXEL CCD IMAGE SENSOR  
SOCS019A – DECEMBER 1991  
DUAL-IN-LINE PACKAGE  
(TOP VIEW)  
High-Resolution, Solid-State Image Sensor  
for NTSC B/W TV Applications  
8-mm Image-Area Diagonal, Compatible  
With 1/2” Vidicon Optics  
SUB  
IAG  
ABG  
1
2
3
4
5
6
7
8
9
20 SUB  
19 IAG  
755 (H) x 242 (V) Active Elements in  
Image-Sensing Area  
18 ABG  
17 SAG  
16 SRG3  
15 SRG2  
14 SRG1  
13 NC  
ADB  
OUT3  
OUT2  
OUT1  
AMP GND  
CDB  
Advanced On-Chip Signal Processing  
Low Dark Current  
Electron-Hole Recombination Antiblooming  
Dynamic Range . . . More Than 70 dB  
High Sensitivity  
12 TRG  
11 IDB  
SUB 10  
High Photoresponse Uniformity  
High Blue Response  
NC – No internal connection  
Single-Phase Clocking  
Solid-State Reliability With No Image  
Burn-in, Residual Imaging, Image  
Distortion, Image Lag, or Microphonics  
description  
The TC245 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W  
NTSC TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small  
size, high reliability, and low cost.  
The image-sensing area of the TC245 is configured into 242 lines with 786 elements in each line. Twenty-nine  
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based  
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated  
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.  
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements  
in alternate fields by one-half of a vertical line during the charge integration period, effectively increasing the  
vertical resolution and minimizing aliasing. The device can also be operated as a 755 (H) by 242 (V)  
noninterlaced sensor with significant reduction in the dark signal.  
Agatedfloating-diffusiondetectionstructurewithanautomaticresetandvoltagereferenceincorporatedon-chip  
converts charge to signal voltage. The signal is further processed by a low-noise, state-of-the-art correlated  
clamp-sample-and-hold circuit. A low-noise, two-stage, source-follower amplifier buffers the output and  
provides high output-drive capability. The image is read out through three outputs, each of which reads out every  
third image column.  
The TC245 is built using TI-proprietary virtual-phase technology, which provides devices with high blue  
response, low dark signal, good uniformity, and single-phase clocking. The TC245 is characterized foroperation  
from –10°C to 45°C.  
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together  
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no  
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent  
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is  
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling  
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.  
Copyright 1991, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
2-1  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

与TC245相关器件

型号 品牌 获取价格 描述 数据表
TC245_1998 TI

获取价格

pixel ccd image sensor
TC245-30 TI

获取价格

SPECIALTY ANALOG CIRCUIT, CDIP20, 1.78 MM PITCH, WINDOWED, CERAMIC, DIP-20
TC245-40 TI

获取价格

SPECIALTY ANALOG CIRCUIT, CDIP20, 1.78 MM PITCH, WINDOWED, CERAMIC, DIP-20
TC246 TI

获取价格

680 x 500 PIXEL IMPACTRON™ COLOR CCD IMAGE
TC246CYM-B0 TI

获取价格

680 x 500 PIXEL IMPACTRONTM COMPLEMENTARY COLOR CCD IMAGE SENSOR
TC2471 TRANSCOM

获取价格

0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
TC247SPD-B0 TI

获取价格

Impactron High Sensitivity VGA-Resolution Frame Interline Transfer B/W CCD (Cooled) 12-XCE
TC2481 TRANSCOM

获取价格

0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
TC2491 TRANSCOM

获取价格

0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs
TC2-4A11 FERROXCUBE

获取价格

Ferrite toroids