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TC247SPD-B0 PDF预览

TC247SPD-B0

更新时间: 2024-09-29 21:18:07
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
27页 498K
描述
Impactron High Sensitivity VGA-Resolution Frame Interline Transfer B/W CCD (Cooled) 12-XCEPT

TC247SPD-B0 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82水平像素:658
安装特点:THROUGH HOLE MOUNT最高工作温度:70 °C
最低工作温度:-20 °C像素大小:10X10 µm
电源:14 V子类别:CCD Image Sensors
表面贴装:NO垂直像素:496
Base Number Matches:1

TC247SPD-B0 数据手册

 浏览型号TC247SPD-B0的Datasheet PDF文件第2页浏览型号TC247SPD-B0的Datasheet PDF文件第3页浏览型号TC247SPD-B0的Datasheet PDF文件第4页浏览型号TC247SPD-B0的Datasheet PDF文件第5页浏览型号TC247SPD-B0的Datasheet PDF文件第6页浏览型号TC247SPD-B0的Datasheet PDF文件第7页 
TC247SPD-B0  
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR  
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005  
DUAL-IN-LINEPACKAGE (TOPVIEW)  
Very Low Noise, Very High  
Sensitivity, Electronically  
Variable Charge Domain Gain  
1/2-in Format, Solid State  
Charge-Coupled Device (CCD)  
Frame Interline Transfer  
Monochrome Image Sensor for  
Low Light Level Applications  
with 30 Frames/s readout speed  
340,000 Pixels per Field  
Frame Memory  
658 (H) x 496 (V) Active Pixels  
in Image Sensing Area  
Multimode Readout Capability  
o Progressive Scan  
o Pseudo-Interlace Scan  
o Line Summing  
o Pixel Summing  
High Photoresponse  
Uniformity Over a Wide  
Spectral Range  
0-8V Serial Operation Except  
CMG Gate  
Continuous Electronic  
Exposure Control from 1/30 s  
to 1/2,000 s  
Solid State Reliability With No  
Image Burn-in, Residual  
Imaging, Image Distortion, or  
Microphonics  
Advanced Lateral Overflow  
Drain  
Package with built-in Peltier  
Cooler and Temperature  
Sensor  
10.0 um Square Pixels  
Low Dark Current  
Description  
The TC247SPD is a frame interline transfer CCD image sensor designed for use in black  
and white, NTSC TV, computer, and special-purpose applications requiring low noise,  
high sensitivity, high speed and low smear.  
The TC247SPD is a new device of the IMPACTRONTM family of very-low noise, high  
sensitivity, high speed and low smear sensors that multiply charge directly in the charge  
domain before conversion to voltage. The charge carrier multiplication (CCM) is  
achieved by using a low-noise single-carrier, impact ionization process that occurs during  
repeated carrier transfers through high field regions. Applying multiplication pulses to  
specially designed gates activates the CCM. Multiplication gain is variable by  
adjusting the amplitude of the multiplication pulses. The device function resembles the  
function of an image intensifier implemented in solid state.  
1
TEXAS  
INSTRUMENTS  
POST OFFICE BOX 655303 * DALLAS TEXAS 75265  

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