TC2481
REV4_20070507
0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
PHOTO ENLARGEMENT
• 27 dBm Typical Output Power at 6 GHz
• 11 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 37 dBm Typical at 6 GHz
• High Power Added Efficiency:
Nominal PAE of 37 % at 6 GHz
• Breakdown Voltage: BVDGO ≥ 15 V
• Lg = 0.35 µm, Wg = 1.2 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Micro-X Metal Ceramic Package
DESCRIPTION
The TC2481 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. All
devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power
amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
MIN
TYP MAX UNIT
Symbol
P1dB Output Power at 1dB Gain Compression Point, f = 6GHz VDS = 8 V, IDS = 120 mA
GL Linear Power Gain , f = 6GHz VDS = 8 V, IDS = 120 mA
CONDITIONS
26.5
27
11
dBm
dB
IP3 Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 120 mA, *PSCL = 14 dBm
37
dBm
%
37
PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz
300
200
-1.7**
18
mA
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
mS
gm
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 2.4 mA
Volts
Volts
°C/W
VP
15
BVDGO Drain-Gate Breakdown Voltage at IDGO =0.6 mA
Rth Thermal Resistance
Note: * PSCL: Output Power of Single Carrier Level.
50
** For the tight control of the pinch-off voltage range, we divide TC2481 into 3 model numbers to fit customer design requirement
(1)TC2481P1519 : Vp = -1.5V to -1.9V (2)TC2481P1620 : Vp = -1.6V to -2.0V (3)TC2481P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
P 1 / 4
Fax: 886-6-5051602