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TC2117-3.0EB

更新时间： 2024-01-02 09:44:32
品牌 Logo 应用领域
美国微芯 - MICROCHIP 稳压器
页数 文件大小 规格书
18页 808K
描述
800 mA Fixed Low Dropout Positive Regulator

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TC2117-3.0EB 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-263
包装说明：ROHS COMPLIANT, PLASTIC, TO-263, DDPAK-3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：12 weeks
风险等级：5.12Is Samacsys：N
可调性：FIXED最大回动电压 1：1.3 V
标称回动电压 1：0.45 V最大绝对输入电压：6.5 V
最大输入电压：6 V最小输入电压：2.7 V
JESD-30 代码：R-PSSO-G3JESD-609代码：e3
长度：10.16 mm最大电网调整率：0.0105%
湿度敏感等级：1功能数量：1
输出次数：1端子数量：3
工作温度TJ-Max：125 °C工作温度TJ-Min：-40 °C
最大输出电流 1：0.8 A最大输出电压 1：3.075 V
最小输出电压 1：2.925 V标称输出电压 1：3 V
封装主体材料：PLASTIC/EPOXY封装代码：TO-263
封装等效代码：SMSIP3H,.55TB封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TAPE AND REEL
峰值回流温度（摄氏度）：245认证状态：Not Qualified
调节器类型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR座面最大高度：5.08 mm
子类别：Other Regulators表面贴装：YES
技术：CMOS端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：2.54 mm
端子位置：SINGLE处于峰值回流温度下的最长时间：40
最大电压容差：2.5%宽度：9.017 mm
Base Number Matches：1

TC2117-3.0EB 数据手册

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TC2117  
† Notice: Stresses above those listed under "Absolute Maxi-  
mum Ratings" may cause permanent damage to the device.  
These are stress ratings only and functional operation of the  
device at these or any other conditions above those indicated  
in the operation sections of the specifications is not implied.  
Exposure to Absolute Maximum Rating conditions for  
extended periods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings†  
Input Voltage .........................................................6.5V  
Output Voltage.................... (VSS – 0.3) to (VIN + 0.3V)  
Power Dissipation................Internally Limited (Note 7)  
Maximum Voltage on Any Pin .........VIN +0.3V to -0.3V  
Operating Temperature ...............-40°C < TJ < +125°C  
Storage temperature ..........................-65°C to +150°C  
DC CHARACTERISTICS  
Electrical Specifications: Unless otherwise indicated, VIN = VR + 1.5V, (Note 1), IL = 100 µA, CL = 3.3 µF, TA = +25°C.  
Boldface type specifications apply for junction temperatures of -40°C to +125°C.  
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Input Operating Voltage  
Maximum Output Current  
Output Voltage  
VIN  
2.7  
—
—
6.0  
V
mA  
V
Note 2  
IOUTMAX  
VOUT  
800  
—
VR – 2.5% VR ± 0.5% VR + 2.5%  
VR – 2% VR ± 0.5% VR + 3%  
VR ≥ 2.5V  
VR = 1.8V  
VOUT Temperature Coefficient  
Line Regulation  
ΔVOUT/ΔT  
ΔVOUT/ΔVIN  
ΔVOUT/VOUT  
VIN–VOUT  
—
—
40  
0.007  
0.002  
20  
—
0.35  
0
ppm/°C Note 3  
%
(VR + 1V) ≤ VIN ≤ 6V  
Load Regulation (Note 4)  
Dropout Voltage (Note 5)  
-0.01  
—
%/mA IL = 0.1 mA to IOUTMAX  
30  
mV  
VR ≥ 2.5V, IL = 100 µA  
VR ≥ 2.5V, IL = 100 mA  
VR ≥ 2.5V, IL = 300 mA  
VR ≥ 2.5V, IL = 500 mA  
VR ≥ 2.5V, IL = 800 mA  
VR = 1.8V, IL = 500 mA  
IL = 800 mA  
—
50  
160  
480  
800  
1300  
1200  
1400  
130  
—
—
150  
260  
450  
1000  
1200  
80  
—
—
—
—
Supply Current  
IDD  
PSRR  
—
µA  
db  
SHDN = VIH, IL = 0  
F ≤ 1 kHz  
Power Supply Rejection Ratio  
Output Short Circuit Current  
Thermal Regulation  
Output Noise  
—
55  
IOUTSC  
ΔVOUT/ΔPD  
eN  
—
1200  
0.04  
300  
—
mA  
V/W  
VOUT = 0V  
—
—
Note 6  
—
—
nV/√Hz IL = 100 mA, F = 10 kHZ  
Note 1: VR is the regulator output voltage setting.  
2: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX  
.
(VOUTMAX – VOUTMIN) – 106  
3:  
TCVOUT = -------------------------------------------------------------------------  
VOUT × ΔT  
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested  
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating  
effects are covered by the thermal regulation specification.  
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal  
value measured at a 1.5V differential.  
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,  
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.  
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-  
perature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dis-  
sipation causes the device to initiate thermal shutdown. Please see Section 4.2 “Thermal Considerations” for more  
details.  
DS21665C-page 2  
© 2006 Microchip Technology Inc.  
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