SEMICONDUCTOR
300 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO34
DEVICE MARKING DIAGRAM
Absolute Maximum Ratings TA = 25°C unless otherwise noted
(TC1N4148M)
Symbol
Parameter
Value
Units
PD
TSTG
TJ
Power Dissipation
300
-65 to +150
+150
mW
°C
Storage Temperature Range
Operating Junction Temperature
Working Inverse Voltage
L
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°C
WIV
IO
75
V
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)
Average Rectified Current
150
mA
mA
IFM
Non-repetitive Peak Forward Current
450
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
IFSURGE
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
L
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Device Code : TC1NxxxxM
Specification Features:
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Fast Switching Device (TRR <4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Anode
Cathode
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
RoHS Compliant
ELECTRICAL SYMBOL
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics
TA = 25°C unless otherwise noted
Limits
Parameter
Test Condition
IR=100µA
Symbol
Unit
Min
Max
BV
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
100
75
Volts
IR=5µA
IR
VR=20V
25
5
nA
µA
VR=75V
VF
TC1N4448M, TC1N914BM
TC1N4148M, TC1N4148M
TC1N4448M, TC1N914BM
IF=5mA
0.62
0.72
1.0
1.0
IF=10mA
Volts
IF=100mA
IF=10mA, VR=6V
RL=100
IRR=1mA
TRR
Reverse Recovery Time
Capacitance
4
4
nS
pF
C
VR=0V, f=1MHZ
Number: DB-050
Jan 2010 / F
Page 1