SEMICONDUCTOR
500 mW DO-35 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO35
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
mW
°C
DEVICE MARKING DIAGRAM
TSTG
Storage Temperature Range
-65 to +150
L
xx
xx
TJ
WIV
IO
Operating Junction Temperature
Working Inverse Voltage
+150
75
°C
V
Average Rectified Current
150
450
mA
mA
L
: Logo
TC1Nxxxx : Device Code
IFM
Non-repetitive Peak Forward Current
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
IFSURGE
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
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Fast Switching Device (TRR <4.0 nS)
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Anode
Cathode
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
ELECTRICAL SYMBOL
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics
TA = 25°C unless otherwise noted
Limits
Parameter
Test Condition
IR=100µA
Symbol
Unit
Min
100
75
Max
BV
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Volts
IR=5µA
IR
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
25
5
nA
µA
VF
TC1N4448, TC1N914B
TC1N4148
0.62
0.72
1.0
1.0
Volts
TC1N4448, TC1N914B
TRR
Reverse Recovery Time
Capacitance
IF=10mA, VR=6V
RL=100
4
4
nS
pF
IRR=1mA
C
VR=0V, f=1MHZ
Number: DB-036
Jan 2010 / G
Page 1