Datasheet > TBSS84ESL

TBSS84ESL

更新时间： 2024-04-09 18:58:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	671K
描述
-50V, P Channel, Small Signal MOSFETs

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TBSS84ESL 数据手册

P-Channel Enhancement Mode MOSFET

TBSS84ES TBSS84ESW TBSS84EST TBSS84ESL

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_GS= 0V, I_D= -250μA

V_DS= -50V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

-50

-1

μA

±1 0

On Characteristics ^*2

V_GS= -5V, I_D= -0.1A

V_GS= -10V, I_D= -0.13A

V_DS= V_GS, I_D= -250μA

2.4

2.0

R_DS(ON)Static Drain-Source On-resistance

V_GS(TH)

Gate Threshold Voltage

-1

-1.5

-2

Dynamic Characteristics ^*3

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

V_GS= 0V

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= -20V

f = 1.0MHz

f = 1.0MHz, V_GS= 0V

721

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time

Turn-on Rise Time

2.5

V_DS= -15V

R_L= -50Ω

I_D= -2.5A

Turn-Off Delay Time

Turn-Off Fall Time

Q_G

Total Gate-Charge

2.5

0.83

0.82

V_DS= -25V

V_GS= -4.5V

I_D= -0.2A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

Source-Drain Diode Characteristics

V_SD

I_S

Diode Forward Voltage ^*2

Continuous Source Current

Pulsed Source Current

I_S= -0.26A, V_GS= 0 V

T_C= 25°C

-0.9

-1.4

-0.13

-0.52

I_SM

T_C= 25°C

Notes:

1、 Surface mounted on FR4 board, and standard footprint, t ≤ 10 sec

2、 Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%

3、 Guaranteed by design, not subject to production

4、 Pulse width limited by maximum junction temperature

MTM0133A: April 2022

www.gmesemi.com

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