Datasheet > TBSS84EST

TBSS84EST

更新时间： 2024-11-19 17:00:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	671K
描述
-50V, P Channel, Small Signal MOSFETs

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中文翻译

获取价格

数据手册

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TBSS84EST 数据手册

P-Channel Enhancement Mode MOSFET

TBSS84ES TBSS84ESW TBSS84EST TBSS84ESL

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

TBSS84ES

SOT-23

TBSS84ESW

SOT-323

ESD protected gate up to 2KV HBM

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



P-channel enhancement mode effect transistor

Switching application

TBSS84EST

SOT-523

TBSS84ESL

DFN1006-3

Mechanical Data



Case: SOT-23, SOT-323, SOT-523, DFN1006-3

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS84ES

TBSS84ESW

TBSS84EST

TBSS84ESL

SOT-23

SOT-323

SOT-523

DFN1006-3

3000 pcs / Tape & Reel

10000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

-50

±20

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current ^*4

-130

-520

I_DM

MTM0133A: April 2022

www.gmesemi.com

12 3 4 5 6 7 8

中文翻译

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