Datasheet > TBSS84EV

TBSS84EV

更新时间： 2024-04-09 19:00:46

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	478K
描述
0.13A, 50V, 0.25W, P Channel, Dual MOSFETs

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TBSS84EV 数据手册

P-Channel Enhancement Mode MOSFET

TBSS84EV

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

ESD protected gate up to 1kV HBM

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



P-channel enhancement mode effect transistor

Switching application

Mechanical Data



Case: SOT-563

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202,

Method 208

SOT-563

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBSS84EV

SOT-563

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate -Source Voltage

Continuous Drain Current

Pulsed Drain Current ^*4

Power Dissipation ^*1

V_DSS

V_GSS

I_D

-50

±20

-130

-520

0.25

I_DM

P_D

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

R_θJL

T_J

500

342

280

°C /W

°C

-55 ~ +150

T_STG

°C

MTM1303A: December 2019 [2.0]

www.gmesemi.com

12 3 4

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