Pigtailed PD for analog application
DataSheet TAP4NN3 Series
Absolute Maximum Ratings
Parameters
Symbol
Unit
Min.
Max.
Remarks
℃
℃
Ambient Operating Temperature
Storage Temperature
Reverse Voltage
Top
Tstg
VRP
IRP
-40
-40
-
85
85
Outdoor use
V
15/20/
3/1 /
50/2/
260/10
Reverse Current
mA
mA
℃/sec
-
Forward Current
IFL
-
Lead Soldering Temp./Time
Electrical & Optical Characteristics
(Top = 25℃)
Parameters
Symbol
Condition
Unit
Min.
Typ.
Max.
Remark
VR=5V, R>0.75
R > 0.65
Detection range
λ
µm
1.1
1.6
VR=5V,λ=1.3µm
VR=5V, λ=1.5µm
VR=5V
0.80
0.85
0.85
0.90
Responsivity
R
A/W
Dark Current
Cut-off Frequency
Reverse Breakdown
Voltage
ID
fc
nA
1.0
-3dB, VR=5V
GHz
2/3
RL=50Ω
VBD
C
VR=5V, IRD=1µA
V
25/0
Capacitance
VR=5V, f=1MHz
VR=12V,
pF
0.6
TAP4NN31)
Second-Order Distortion
IMD2
P
AVG=0dBm,
dBc
-70 TZP4NN32)
TBP4NN33)
OMI=0.4, Note1
TZP4NN32)
-75
Third-Order Distortion
IMD3
IL
Note 1
dBc
dB
TBP4NN33)
Back Reflection
Active Area
Diameter
-45
75/70
for 2GHz
for 5GHz
∅
µm
45
Note1-1) TAP4NN3 : Two-tone test condition : f1=13MHz, f2=19MHz, f1±f2
Note1-2) TZP4NN3 : Two-tone test condition : f1=320MHz, f2=450MHz, f1±f2, λ=1550nm per channel
Note1-3) TBP4NN3 : same as the Note1-2
! Handling Caution
The Photo-diode can be damaged by overvoltage and current surges. Precautions should be
taken for transient power supply.
This device is susceptible to damage as a result of electrostatic discharge(ESD). Take proper
precautions during both handling and testing
Teradian Inc.
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DS-TP-110-Rev01
2004-07-14