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TAA4036 PDF预览

TAA4036

更新时间: 2022-12-16 21:27:14
品牌 Logo 应用领域
其他 - ETC 光电二极管
页数 文件大小 规格书
4页 251K
描述
Pigtailed PD for analog application

TAA4036 数据手册

 浏览型号TAA4036的Datasheet PDF文件第1页浏览型号TAA4036的Datasheet PDF文件第3页浏览型号TAA4036的Datasheet PDF文件第4页 
Pigtailed PD for analog application  
DataSheet TAP4NN3 Series  
Absolute Maximum Ratings  
Parameters  
Symbol  
Unit  
Min.  
Max.  
Remarks  
Ambient Operating Temperature  
Storage Temperature  
Reverse Voltage  
Top  
Tstg  
VRP  
IRP  
-40  
-40  
-
85  
85  
Outdoor use  
V
15/20/  
3/1 /  
50/2/  
260/10  
Reverse Current  
mA  
mA  
/sec  
-
Forward Current  
IFL  
-
Lead Soldering Temp./Time  
Electrical & Optical Characteristics  
(Top = 25)  
Parameters  
Symbol  
Condition  
Unit  
Min.  
Typ.  
Max.  
Remark  
VR=5V, R>0.75  
R > 0.65  
Detection range  
λ
µm  
1.1  
1.6  
VR=5V,λ=1.3µm  
VR=5V, λ=1.5µm  
VR=5V  
0.80  
0.85  
0.85  
0.90  
Responsivity  
R
A/W  
Dark Current  
Cut-off Frequency  
Reverse Breakdown  
Voltage  
ID  
fc  
nA  
1.0  
-3dB, VR=5V  
GHz  
2/3  
RL=50Ω  
VBD  
C
VR=5V, IRD=1µA  
V
25/0  
Capacitance  
VR=5V, f=1MHz  
VR=12V,  
pF  
0.6  
TAP4NN31)  
Second-Order Distortion  
IMD2  
P
AVG=0dBm,  
dBc  
-70 TZP4NN32)  
TBP4NN33)  
OMI=0.4, Note1  
TZP4NN32)  
-75  
Third-Order Distortion  
IMD3  
IL  
Note 1  
dBc  
dB  
TBP4NN33)  
Back Reflection  
Active Area  
Diameter  
-45  
75/70  
for 2GHz  
for 5GHz  
µm  
45  
Note1-1) TAP4NN3 : Two-tone test condition : f1=13MHz, f2=19MHz, f1±f2  
Note1-2) TZP4NN3 : Two-tone test condition : f1=320MHz, f2=450MHz, f1±f2, λ=1550nm per channel  
Note1-3) TBP4NN3 : same as the Note1-2  
! Handling Caution  
The Photo-diode can be damaged by overvoltage and current surges. Precautions should be  
taken for transient power supply.  
This device is susceptible to damage as a result of electrostatic discharge(ESD). Take proper  
precautions during both handling and testing  
Teradian Inc.  
- 2 / 4 -  
DS-TP-110-Rev01  
2004-07-14  

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