Datasheet > T2316405A-70

T2316405A-70

更新时间： 2024-02-21 18:47:36

品牌	Logo	应用领域
TMT		/
页数	文件大小	规格书
14页	137K
描述
4M x 4 DYNAMIC RAM EDO PAGE MODE

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中文翻译

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数据手册

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T2316405A-70 数据手册

T2316405A

Preliminary T2316407A

Notes:

1. An initial pause of 200us is required after

11. t

and

are

WCS RWD

AWD

CWD

RAS

power-up followed by eight

refresh

only or CBR) before proper

restrictive operating parameters in LATE

WRITE and READ-MODIFY-WRITE cycles

RAS

cycles (

only. If t

WCS

EARLY WRITE cycle and the data output will

remain an open circuit throughout the entire

t (min), the cycle is an

WCS

device operation is assured. The eight RAS

cycle wake-ups should be repeated any time

the t

refresh requirement is exceeded.

REF

cycle. If t

(min), t

RWD

(min) and t

RWD

AWD

2. V (2.0V) and V (0.8V) are reference

IH IL

t (min), the

CWD

AWD

CWD

levels for measuring timing of input signals.

Transition times are measured between

cycle is READ-WRITE and the data output

will contain data read from the selected cell. If

neither of the above conditions is met, the state

and V .

IL(0.8V)

IH(2.0V)

3. In addition to meet the transition rate

specification, all input signals must transit

CAS

of I/O (at access time and until

and

RAS or OE go back to V ) is indeterminate.

taken low after

between V and V in a monotonic manner.

CAS

held high and

4. Assume that t

< t

(max). If t

RCD RCD RCD

goes low result in a LATE WRITE (

controlled) cycle.

greater than the maximum recommended value

shown in this table, t will increase by the

RAC

exceeds the value shown.

CAS

12. These parameters are referenced to

amount that t

RCD

5. Assume that t

leading edge in EARLY WRITE cycles and

WE leading edge in LATE WRITE or READ-

MODIFY-WRITE cycles.

(max) .

RCD RCD

6. Enables on-chip refresh and address counters.

7. Operation within the t (max) limit ensures

RCD

13. During a READ cycle, if OE is low then taken

that t

(max) can be met. t

(max) is

RAC

RCD

CAS

HIGH before

WRITE

goes high, I/O goes open,

is tied permanently low, a LATE

or READ-MODIFY-WRITE

specified as a reference point only; if t

RCD

greater than the specified t

access time is controlled by t

(max) limit,

RCD

CAC

operation is not possible.

8. Operation within the t

limit ensures that

RAD

14. WRITE command is defined as

going low.

(max) can be met. t

(max) is

RAC RAD

15. LATE WRITE and READ-MODIFY-WRITE

cycles must have both t and t met

specified as a reference point only; if t

RAD

OFF2 OEH

greater than the specified t

(max) limit,

RAD

( OE high during WRITE cycle) in order to

ensure that the output buffers will be open

during the WRITE cycles.

access time is controlled by t

must be satisfied for a

9. Either t

RCH

or t

RRH

READ cycle.

16. The I/Os open during READ cycles once

10. t (max) defines the time at which the

OFF1

output achieves the open circuit condition; it is

not a reference to V or V

or t

OFF2

occur.

OFF1

OH OL

Taiwan Memory Technology, Inc. reserves the right P. 7

to change products or specifications without notice.

Publication Date: APR. 2001

Revision:0.B

1...4 5 678 9 10...14

中文翻译

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与T2316405A-70相关器件

型号	品牌	获取价格	描述	数据表
T2316407A	TMT	获取价格	4M x 4 DYNAMIC RAM EDO PAGE MODE
T2316407A-10	TMT	获取价格	4M x 4 DYNAMIC RAM EDO PAGE MODE
T2316407A-50	TMT	获取价格	4M x 4 DYNAMIC RAM EDO PAGE MODE
T2316407A-60	TMT	获取价格	4M x 4 DYNAMIC RAM EDO PAGE MODE
T2316407A-70	TMT	获取价格	4M x 4 DYNAMIC RAM EDO PAGE MODE
T2317	ETC	获取价格	A range of professional quality tweezers
T2317S	BEL	获取价格	Telecom Transformer
T2318	ETC	获取价格	A range of professional quality tweezers
T2319	ETC	获取价格	A range of professional quality tweezers
T231-SERIES	ETC	获取价格	Peripheral IC

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