5秒后页面跳转
T0930 PDF预览

T0930

更新时间: 2024-02-10 19:13:37
品牌 Logo 应用领域
爱特美尔 - ATMEL 半导体放大器功率放大器
页数 文件大小 规格书
10页 138K
描述
SiGe Power Amplifier for CW Applications

T0930 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, SSOP-16Reach Compliance Code:not_compliant
风险等级:5.13特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):12 dBm
JESD-609代码:e0安装特点:SURFACE MOUNT
功能数量:1端子数量:16
最大工作频率:935 MHz最小工作频率:880 MHz
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SSOP16,.25
电源:2.4/3.2 V射频/微波设备类型:NARROW BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)最大电压驻波比:2
Base Number Matches:1

T0930 数据手册

 浏览型号T0930的Datasheet PDF文件第2页浏览型号T0930的Datasheet PDF文件第3页浏览型号T0930的Datasheet PDF文件第4页浏览型号T0930的Datasheet PDF文件第6页浏览型号T0930的Datasheet PDF文件第7页浏览型号T0930的Datasheet PDF文件第8页 
T0930  
Electrical Characteristics for 2 W Application  
VCC = VCC1, ... , VCC3, VCC, CTL = +3.2 V, VCTL = 1.9 V, Tamb = +25°C, 50-input and 50-external output match  
No. Parameters  
Power Supply  
5.1 Supply voltage  
Current consumption in  
Test Conditions  
Pin  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
5
VCC  
I
2.6  
3.2  
3.6  
V
A
A
A
Pout = 33 dBm  
PAE = 47%  
5.2  
1.33  
active mode  
Current consumption  
5.3 (leakage current)  
in power-down mode  
VCTL ? 0.2 V  
I
10  
µA  
A
6
RF Input  
6.1 Frequency range  
6.2 Input impedance(1)  
6.3 Input power  
fin  
Zi  
880  
900  
50  
5
935  
MHz  
A
C
C
Pin  
12  
dBm  
Pin = 0 to 12 dBm  
Pout = 30 dBm  
6.4 Input VSWR(1)  
2:1  
C
7
RF Output  
7.1 Output impedance(1)  
Zo  
50  
C
A
Pin = 5 dBm, RL = RG = 50 ꢀ  
VCC = 3.2 V, Tamb = +25LC  
Output power in normal  
7.2  
Pout  
Pout  
33  
30  
dBm  
dBm  
conditions  
VCC = 2.2 V, Tamb = +25LC  
7.3 Minimum output power  
7.4 Power-added efficiency  
VCTL = 0.3 V  
- 20  
47  
dBm  
%
A
A
VCC = 3.2 V, Pout = 27 dBm  
PAE  
Temp = -25 to + 85LC  
no spurious O -60 dBc  
7.5 Stability  
VSWR  
10:1  
10:1  
C
C
Load mismatch  
7.6  
Pout = 33 dBm, all phases  
VSWR  
(stable, no damage)  
Second harmonic  
distortion  
7.7  
2fo  
3fo  
-35  
-35  
dBc  
dBc  
A
A
7.8 Third harmonic distortion  
Noise power  
7.9 f = 925 to 935 MHz  
f O 935 MHz  
P
out = 33 dBm  
-73  
-85  
-70  
-82  
dBm  
dBm  
C
RBW = 100 kHz  
7.10 Rise and fall time  
0.5  
µs  
A
C
Isolation between input  
Pin = 0 to 10 dBm  
VCTL ? 0.2 V (power down)  
7.11  
50  
dB  
and output  
8
Power Control  
8.1 Control curve  
Pout O 25 dBm  
150  
dB/V  
dB  
V
C
C
A
A
8.2 Power control range  
8.3 Control voltage range  
8.4 Control current  
VCTL = 0.3 to 2.0 V  
50  
VCTL  
ICTL  
0.3  
2.0  
Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V  
200  
µA  
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
Notes: 1. With external matching (see “Application Circuit”).  
5
4722A–SIGE–06/03  

与T0930相关器件

型号 品牌 描述 获取价格 数据表
T0930-TJQ ATMEL SiGe Power Amplifier for CW Applications

获取价格

T0930-TJT ATMEL SiGe Power Amplifier for CW Applications

获取价格

T0931R12 ETC Professional quality Hacksaws and Junior Hacksaws

获取价格

T0933R12 ETC Professional quality Hacksaws and Junior Hacksaws

获取价格

T0934R12 ETC Professional quality Hacksaws and Junior Hacksaws

获取价格

T0952-6BQ ATMEL Narrow Band Low Power Amplifier, 1800MHz Min, 2000MHz Max, 1 Func, BIPolar, PLASTIC, TSSOP

获取价格