是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | WAFER | 包装说明: | X-XUUC-N |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.40 | 风险等级: | 5.76 |
应用: | GENERAL PURPOSE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | X-XUUC-N | JESD-609代码: | e3 |
最大非重复峰值正向电流: | 3800 A | 元件数量: | 1 |
相数: | 1 | 最大输出电流: | 157 A |
封装主体材料: | UNSPECIFIED | 封装形状: | UNSPECIFIED |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 1200 V |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | 35 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
T-DWP110-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 157A, 1800V V(RRM), Silicon, WAFER | |
T-DWP17-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 31A, 1200V V(RRM), Silicon, WAFER | |
T-DWP17-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 31A, 1800V V(RRM), Silicon, WAFER | |
T-DWP21-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 42A, 1200V V(RRM), Silicon, WAFER | |
T-DWP21-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 42A, 1800V V(RRM), Silicon, WAFER | |
T-DWP35-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 53A, 1800V V(RRM), Silicon, WAFER | |
T-DWP50-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 64A, 1800V V(RRM), Silicon, WAFER | |
T-DWP5-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 14A, 1200V V(RRM), Silicon, WAFER | |
T-DWP75-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 83A, 1200V V(RRM), Silicon, WAFER | |
T-DWP75-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 83A, 1800V V(RRM), Silicon, WAFER |