Datasheet > SWG3400

SWG3400

更新时间： 2025-09-06 07:08:03

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	100K
描述
30V Single N-Channel Enhancement-Mode MOSFET

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SWG3400 数据手册

SWG3400

30V Single N-Channel Enhancement-Mode MOSFET

General Description

Product Summary

● BV_DSS

30V

● Low gate charge.

DS(on)

@VGS = 10V

@VGS = 4.5V

@VGS = 2.5V

< 30m

< 40m

< 60m

Ω

●

● Use as a load switch.

Use in PWM applications

●

SOT-23-3L

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±12

Drain Current (T_A=25ºC)

Drain Current (T_A=75ºC)

Pulsed Drain Current ^a

I_D

I_DM

Power Dissipation ^b(T_A=25ºC)

Power Dissipation ^b(T_A=75ºC)

ºC

1.4

P_D

1.0

Junction and Storage Temperature Range

T_J,T_STG

-55 ~ +150

Thermal Characteristics

Parameter

Symbol

R_θJA

Maximum

Units

ºC/W

Junction-to-Ambient ^a(t ≤ 10s)

100

130

Junction-to-Ambient ^a,d(Steady-State)

Junction-to-Lead (Steady-State)

R_θJL

SWDS-SWG3400-Rev01

1/2

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