Datasheet > SW9N90

SW9N90

更新时间： 2022-09-24 00:01:06

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	1141K
描述
N-channel MOSFET

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SW9N90 数据手册

SAMWIN

SW9N90

N-channel MOSFET

TO-3P

Features

BV_DSS: 900V

■ High ruggedness

I_D

: 9.0A

■ R_DS(ON)(Max 1.45 Ω)@V_GS=10V

■ Gate Charge (Typ 60nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 1.45ohm

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

Absolute maximum ratings

SW9n90

Symbol

V_DSS

I_D

Parameter

Unit

TO-3P

900

Drain to Source Voltage

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

9.0

5.6

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

±30

850

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

4.5

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

240

P_D

1.92

-55 ~ + 150

W/^oC

^oC

T_STG, T_JOperating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering

T_L

300

^oC

purpose, 1/8 from Case for 5 seconds.

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

0.24

Max.

0.52

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

Thermal resistance, Junction to ambient

Mar. 2011. Rev. 3.0

1/7

12 3 4 5 6 7

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