Datasheet > SW840

SW840

更新时间： 2022-09-24 00:03:32

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描述
N-Channel MOSFET

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SW840 数据手册

SAMWIN

SW840

General Description

Features

This power MOSFET is produced with advanced

VDMOS process, planar stripe. This technology enable

power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge

and especially excellent avalanche characteristics. This

power MOSFET is usually used at high efficient DC to

DC converter block, high efficiency switch mode power

supplies, power factor correction, electronic lamp ballast

based on half bridge.

N-Channel MOSFET

BV_DSS(Minimum)

R_DS(ON)(Maximum)

I_D

Qg (Typical)

P_D(@TC=25

: 500 V

: 0.85 ohm

: 8.5 A

: 36 nc

: 125 W

)

Absolute Maximum Ratings

Symbol

Parameter

Value

500

8.5

Units

V_DSS

Drain to Source Voltage

Continuous Drain Current (@Tc=25

Continuous Drain Current (@Tc=100

Drain Current Pulsed

)

I_D

)

6.2

I_DM

V_GS

(Note 1)

Gate to Source Voltage

E_AS

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 3)

360

12.5

4.5

V/ns

E_AR

dv/dt

Total Power Dissipation (@Tc=25

Derating Factor above 25

)

125

1.18

P _D

T_STG,T_J

T_L

Operating junction temperature &Storage temperature

-55~+150

300

Maximum Lead Temperature for soldering purpose, 1/8 from Case

for 5 seconds.

Thermal Characteristics

Value

Units

Symbol

Parameter

Min

Typ

Max

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.5

1.0

/ W

Thermal Resistance, Junction-to-Ambient

62.5

1/6

REV0.1

04.10.15

12 3 4 5 6

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