Datasheet > SW8N70D

SW8N70D

更新时间： 2024-04-09 19:00:01

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	775K
描述
TO-220F,TO-262N

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SW8N70D 数据手册

SW8N70D

N-channel Enhanced mode TO-220F/TO-262N MOSFET

Features

TO-262N

TO-220F

BV_DSS: 700V

I_D: 8A

 High ruggedness

 Low R_DS(ON)(Typ 1.0mΩ)@V_GS=10

 Low Gate Charge (Typ 37nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Electronic Ballast , Motor

Control , Synchronous Rectification, Inverter

R_DS(ON): 1.0Ω

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW F 8N70D

SW J 8N70D

Marking

Package

TO-220F

TO-262N

Packaging

TUBE

SW8N70D

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220F

TO-262N

V_DSS

I_D

Drain to source voltage

700

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

528

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

162

1.3

P_D

T_STG, T_J

T_L

0.3

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220F

TO-262N

0.77

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

2.9

^oC/W

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

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