Datasheet > SW8N60

SW8N60

更新时间： 2022-03-30 20:12:49

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	522K
描述
N-channel MOSFET

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SW8N60 数据手册

SW8N60

N-channel MOSFET

BV_DSS: 600V

SAMWIN

TO-220F

TO-220

Features

I_D

: 7.5A

■ High ruggedness

■ R_DS(ON)(Max 1.3 Ω)@V_GS=10V

■ Gate Charge (Typ 38nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 1.3ohm

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

Order Codes

Item

Sales Type

SW P 8N60

SW F 8N60

Marking

SW8N60

Package

TO-220

Packaging

TUBE

TO-220F

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220

7.5

TO-220F

7.5*

V_DSS

I_D

Drain to Source Voltage

600

Continuous Drain Current (@T_C=25^oC)

Drain current pulsed

I_DM

(note 1)

V_GS

E_AS

E_AR

dv/dt

Gate to Source Voltage

± 30

230

14.7

4.5

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

147

53*

P_D

T_STG, T_J

T_L

1.18

0.43

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

300

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220

0.85

TO-220F

2.35

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Jun. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

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