SW60N04V PDF预览

SW60N04V

更新时间: 2025-07-16 17:02:15
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 547K
描述
DFN5X6

SW60N04V 数据手册

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SW60N04V  
N-channel Enhanced mode DFN5*6 MOSFET  
Features  
DFN5*6  
BVDSS : 40V  
ID : 60A  
High ruggedness  
Low RDS(ON) (Typ 2.9m)@VGS=4.5V  
(Typ 2.3m)@VGS=10V  
Low Gate Charge (Typ 127nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
1
2
3
4
8
7
6
5
RDS(ON) : 2.9m@VGS=4.5V  
2.3m@VGS=10V  
Application:DC-DC Converter, Inverter,  
Synchronous Rectification  
D(5,6,7,8)  
4.Gate 5,6,7,8.Drain 1,2,3.Source  
G(4)  
General Description  
S(1,2,3)  
This power MOSFET is produced with advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
Sales Type  
Marking  
Package  
DFN5*6  
Packaging  
REEL  
SW HA 60N04V  
SW60N04V  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
40  
Unit  
V
VDSS  
Drain to source voltage  
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
60*  
A
ID  
38*  
A
IDM  
VGS  
EAS  
(note 1)  
240  
A
Gate to source voltage  
±20  
792  
V
Single pulsed avalanche energy  
Repetitive avalanche energy  
Peak diode recovery dv/dt  
(note 2)  
(note 1)  
(note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
18  
5
Total power dissipation (@Ta=25oC)  
Derating factor above 25oC  
3.2  
PD  
0.03  
-55 ~ + 150  
W/oC  
oC  
T
STG, TJ  
Operating junction temperature & storage temperature  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Symbol  
Rthja  
Parameter  
Thermal resistance, Junction to ambient  
Value  
39  
Unit  
oC/W  
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d  
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's  
board design. 39oC/W on a 1 in2 pad of 2oz copper.  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Apr. 2019. Rev. 4.0  
1/6  

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