Datasheet > SW110R03VT

SW110R03VT

更新时间： 2024-04-09 19:00:58

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	683K
描述
SOP-8

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SW110R03VT 数据手册

SW110R03VT

Electrical characteristic ( T_J= 25^oC unless otherwise specified )

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Off characteristics

BV_DSS

Drain to source breakdown voltage

V_GS=0V, I_D=250uA

ΔBV_DSSBreakdown voltage temperature

I_D=250uA, referenced to 25^oC

0.02

V/^oC

/ ΔT_J

coefficient

V_DS=30V, V_GS=0V

V_DS=24V, T_J=125^oC

V_GS=20V, V_DS=0V

V_GS=-20V, V_DS=0V

I_DSS

Drain to source leakage current

Gate to source leakage current, forward

Gate to source leakage current, reverse

100

-100

I_GSS

On characteristics

V_GS(TH)

R_DS(ON)

G_fs

Gate threshold voltage

V_DS=V_GS, I_D=250uA

V_GS=4.5V, I_D=6A,T_J=25^oC

V_GS=10V, I_D=6A,T_J=25^oC

V_GS=4.5V, I_D=6A,T_J=125^oC

V_GS=10V, I_D=6A,T_J=125^oC

V_DS=10V, I_D=6A

9.8

8.3

11.5

9.5

mΩ

Drain to source on state resistance

Forward transconductance

13.7

11.6

Dynamic characteristics

C_iss

C_oss

C_rss

t_d(on)

t_r

Input capacitance

1127

173

125

Output capacitance

Reverse transfer capacitance

Turn on delay time

Rising time

V_GS=0V, V_DS=15V, f=1MHz

V_DS=15V, I_D=8A, R_G=4.7Ω,

V_GS=10V

t_d(off)

t_f

Turn off delay time

Fall time

(note 4,5)

Q_g

Total gate charge

Gate-source charge

Gate-drain charge

Gate resistance

V_DS=24V, V_GS=10V, I_D=8A

I_G=4mA

Q_gs

Q_gd

R_g

(note 4,5)

V_DS=0V, Scan F mode

Ω

Source to drain diode ratings characteristics

Symbol

I_S

Parameter

Continuous source current

Pulsed source current

Test conditions

Min.

Typ.

Max. Unit

Integral reverse p-n Junction

diode in the MOSFET

I_SM

V_SD

t_rr

Diode forward voltage drop.

Reverse recovery time

I_S=11A, V_GS=0V

1.4

I_S=8A, V_GS=0V,

dI_F/dt=100A/us

Q_rr

Reverse recovery charge

※. Notes

Repeatitive rating : pulse width limited by junction temperature.

L =0.5mH, I_AS=15A, V_DD=10V, R_G=25Ω, Starting T_J= 25^oC

I_SD≤ 8A, di/dt = 100A/us, V_DD≤ BV_DSS, Staring T_J=25^oC

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%

Essentially independent of operating temperature.

Aug. 2019. Rev. 2.0

2/6

123 4 5 6

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