SW110R03VT
N-channel Enhanced mode SOP8 MOSFET
Features
BVDSS : 30V
ID : 11A
SOP8
High ruggedness
5
6
Low RDS(ON) (Typ 9.8mΩ)@VGS=4.5V
Low RDS(ON) (Typ 8.3mΩ)@VGS=10V
Low Gate Charge (Typ 24nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC Converter,Motor
Control,Synchronous Rectification
7
8
RDS(ON) : 9.8mΩ@VGS=4.5V
8.3mΩ@VGS=10V
4
3
2
1
D
4.Gate 5,6,7,8.Drain 1,2,3.Source
G
General Description
S
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
SOP8
Packaging
REEL
SW K 110R03VT
SW110R03VT
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
VDSS
Drain to source voltage
30
Continuous drain current (@Ta=25oC)
Continuous drain current (@Ta=70oC)
Drain current pulsed
11*
A
ID
10*
A
IDM
VGS
EAS
(note 1)
44
A
Gate to source voltage
± 20
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
56
mJ
mJ
V/ns
W
EAR
dv/dt
6
5
2.3
Total power dissipation (@Ta=25oC)
Derating factor above 25oC
PD
0.02
W/oC
oC
TSTG, TJ
Operating junction temperature & storage temperature
-55 ~ + 150
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthja
Parameter
Thermal resistance, Junction to ambient
Value
53.5
Unit
oC/W
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's
board design.
SOP-8 Rthja : 53.5oC/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2019. Rev. 2.0
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