SW110R06VT
N-channel Enhanced mode SOP8/DFN5*6 MOSFET
Features
BVDSS : 60V
ID : 11A
SOP8
DFN5*6
High ruggedness
Low RDS(ON) (Typ 11mΩ)@VGS=4.5V
(Typ 10mΩ)@VGS=10V
Low Gate Charge (Typ 69nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Electronic Ballast, Motor
Control, Synchronous Rectification
1
2
3
4
8
7
6
5
5
6
7
RDS(ON) : 11mΩ@VGS=4.5V
8
4
10mΩ@VGS=10V
3
2
1
D
SOP8&DFN5*6:4.Gate 5,6,7,8.Drain
1,2,3.Source
G
General Description
S
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
SOP8
Packaging
REEL
SW K 110R06VT
SW HA 110R06VT
SW110R06VT
SW110R06VT
2
DFN5*6
REEL
Absolute maximum ratings
Value
Symbol
Parameter
Unit
SOP8
DFN5*6
VDSS
ID
Drain to source voltage
60
11*
7*
V
A
Continuous drain current (@Ta=25oC)
Continuous drain current (@Ta=70oC)
Drain current pulsed
A
IDM
VGS
EAS
(note 1)
44
A
Gate to source voltage
±20
197
12
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
5
Total power dissipation (@Ta=25oC)
Derating factor above 25oC
2.6
2.8
PD
0.02
0.02
W/oC
oC
TSTG, TJ
Operating junction temperature & storage temperature
-55 ~ + 150
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Rthja
Parameter
Thermal resistance, Junction to ambient
Unit
SOP8
48.7
DFN5*6
44
oC/W
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's
board design.
SOP8 Rthja :48.7oC/W on a 1 in2 pad of 2oz copper.
DFN5*6 Rthja :44oC/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2019. Rev. 5.0
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