Datasheet > SVF9N90T

SVF9N90T

更新时间： 2022-02-26 13:58:50

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
8页	1591K
描述
ThinkiSemi 8.0A,900V Planar N-Channel Power MOSFETs

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SVF9N90T 数据手册

SVF9N90T/SVF9N90F

Typical Characteristics (Continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

※

Notes :

1. V = 0 V

0.9

2. I_D^G=^S250

※

Notes :

1. V_GS= 10 V

2. I_D= 4.5 A

0.8

-100

-50

100

150

200

-50

100

150

200

T_J, Junction Temperature [^oC]

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

is Limited by R _DS(on)

10²

Operation in This Area

is Limited by R _DS(on)

10 µs

100 µs

10¹

10⁰

1 ms

10 ms

1 ms

10 ms

100 ms

-1

※Notes :

※

Notes :

1. T_C= 25 ^oC

2. T = 150 ^oC

3. Single Pulse

-2

10⁰

10¹

10²

10³

V_DS, Drain-Source Voltage [V]

Figure 9-2. Maximum Safe Operating Area

for FQPF9N90C

Figure 9-1. Maximum Safe Operating Area

for FQP9N90C

100

125

150

℃

T_C, Case Temperature [

]

Figure 10. Maximum Drain Current

vs Case Temperature

Page 4/8

http://www.thinkisemi.com.tw/

Rev.10T

1 2 345 6 7 8

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