Datasheet > SVF9N90T

SVF9N90T

更新时间： 2022-02-26 13:58:50

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
8页	1591K
描述
ThinkiSemi 8.0A,900V Planar N-Channel Power MOSFETs

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SVF9N90T 数据手册

SVF9N90T/SVF9N90F

Pb Free Plating Product

ThinkiSemi 8.0A,900V Planar N-Channel Power MOSFETs

2. Drain

{

= 900V

DSS

●

Features

= 1.40ohm

◀

▲

DS(ON)

●

{

1. Gate

■ Low R_DS(on) (1.40 Ω )@V_GS=10V,ID=4A

■ Low Gate Charge (Typical 45nC)

■ Low Crss (Typical 14pF)

I = 8.0A(9.0A Max.)

{

3. Source

TO-220F-3L

(SVF9N90F)

TO-220C-3L

(SVF9N90T)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (150°C)

General Description

This Power MOSFET is produced using ThinkiSemi's advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for synchronous DC-DC Converters and Power Management in

portable and battery operated products.

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

Parameter

SVF9N90T

SVF9N90F

Unit

Drain-Source Voltage

900

DSS

- Continuous (T = 25°C)

Drain Current

8.0

2.8

8.0 *

2.8 *

32 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

900

8.0

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

20.5

4.0

V/ns

dv/dt

Power Dissipation (T = 25°C)

205

- Derate above 25°C

Operating and Storage Temperature Range

1.64

0.54

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Unit

SVF9N90T

SVF9N90F

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.61

1.85

°C/W

θJC

0.5

θJS

62.5

θJA

Page 1/8

http://www.thinkisemi.com.tw/

Rev.10T

12 3 4 5 6 7 8

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