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STYN255 PDF预览

STYN255

更新时间: 2022-04-10 16:36:06
品牌 Logo 应用领域
SIRECTIFIER 可控硅
页数 文件大小 规格书
2页 122K
描述
晶闸管(可控硅)Thyristor (SCRs),分立式单向可控硅Discrete Thyristors (SCRs)。

STYN255 数据手册

 浏览型号STYN255的Datasheet PDF文件第2页 
STYN255 thru STYN855  
Discrete Thyristors(SCRs)  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AD  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
G
A
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
K
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
A
K
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
G
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
N
1.5 2.49 0.087 0.102  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
Average on-state current (180° conduction angle)  
T(RMS)  
Tc = 75°C  
Tc = 75°C  
55  
35  
A
A
IT  
(AV)  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
610  
580  
TSM  
Tj = 25°C  
A
²
²
2
Tj = 25°C  
A
S
1680  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 60 Hz  
tp = 20 µs  
Tj = 125°C  
50  
A/µs  
_
= 2 x I , tr < 100 ns  
GT  
I
G
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
8
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage (for TN8 & TYN only)  
RGM  
5

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