STYN212(S) thru STYN1012(S)
Discrete Thyristors(SCRs)
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
Dimensions TO-220AB
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
G
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
K
A
K
0.100
BSC
G
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-263(D2PAK)
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
A
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
G
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
K
E
E1
e
9.65
6.22
2.54 BSC
10.29
8.13
.380 .405
.245 .320
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
L1
L2
L3
L4
.110
.055
.070
.008
R
0.46
0.74
.018
.029
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
12
Unit
I
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
C
Tc = 105°
T(RMS)
A
A
IT
(AV)
Tc = 105°C
Tj = 25°C
8
I
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
146
140
98
TSM
A
²
²
2
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
A
S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
50
A/µs
_
= 2 x I , tr < 100 ns
GT
I
G
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
V
Tj
V
Maximum peak reverse gate voltage (for TN8 & TYN only)
RGM
5