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STT181GK12B PDF预览

STT181GK12B

更新时间: 2022-02-26 10:44:55
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SIRECTIFIER /
页数 文件大小 规格书
4页 392K
描述
Thyristor-Thyristor Modules

STT181GK12B 数据手册

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STT181GKXXB  
Thyristor-Thyristor Modules  
Test Conditions  
Symbol  
Characteristic Values  
Unit  
TVJ=TVJM; VR=VRRM; VD=VDRM  
IT, IF=300A; TVJ=25oC  
For power-loss calculations only (TVJ=125oC)  
10  
mA  
V
IRRM, IDRM  
VT, VF  
VTO  
1.25  
0.88  
1.15  
V
m
rT  
VD=6V;  
TVJ=25oC  
TVJ=-40oC  
2.5  
2.6  
V
VGT  
IGT  
VD=6V;  
TVJ=25oC  
150  
200  
mA  
TVJ=-40oC  
TVJ=TVJM;  
VD=2/3VDRM  
0.2  
10  
V
VGD  
IGD  
mA  
TVJ=25oC; tp=30us; VD=6V  
IG=0.5A; diG/dt=0.5A/us  
TVJ=25oC; VD=6V; RGK=  
TVJ=25oC; VD=1/2VDRM  
IG=0.5A; diG/dt=0.5A/us  
IL  
IH  
300  
200  
2
mA  
mA  
us  
tgd  
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us  
VR=100V; dv/dt=20V/us; VD=2/3VDRM  
typ.  
150  
us  
tq  
TVJ=TVJM; IT, IF=300A; -di/dt=50A/us  
550  
235  
uC  
A
QS  
IRM  
per thyristor/diode; DC current  
per module  
0.155  
0.0775  
K/W  
K/W  
RthJC  
RthJK  
per thyristor/diode; DC current  
per module  
0.225  
0.1125  
Creeping distance on surface  
Strike distance through air  
12.7  
9.6  
50  
mm  
mm  
m/s2  
dS  
dA  
a
Maximum allowable acceleration  
FEATURES  
* International standard package  
* Copper base plate  
APPLICATIONS  
* Motor control  
* Power converter  
ADVANTAGES  
* Space and weight savings  
* Simple mounting  
* Glass passivated chips  
* Isolation voltage 3600 V~  
* Heat and temperature control for  
industrial furnaces and chemical  
processes  
* Lighting control  
* Contactless switches  
* Improved temperature and power  
cycling  
* Reduced protection circuits  
* UL file NO.E310749  
*
RoHS compliant  
P2  
www.sirectifier.com  
©2008 SIRECTIFIER All rights reserved,  
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com  

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