Datasheet > STS7P4LLF6

STS7P4LLF6

更新时间： 2023-12-20 18:44:28

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	260K
描述
P沟道40 V、0.0175 Ohm典型值、7 A STripFET F6功率MOSFET，SO-8封装

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STS7P4LLF6 数据手册

STS7P4LLF6

Datasheet

P-channel 40 V, 17.5 mΩ typ., 7 A, STripFET F6 Power MOSFET

in an SO-8 package

Features

DS(on)

max.

Order code

STS7P4LLF6

40 V

20.5 mΩ

7 A

•

Very low on-resistance

Very low gate charge

SO-8

High avalanche ruggedness

Low gate drive power loss

D(5, 6, 7, 8)

Applications

•

Switching applications

G(4)

Description

This device is a P-channel Power MOSFET developed using the STripFET F6

technology, with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

S(1, 2, 3)

AM01475v4

Product status link

STS7P4LLF6

Product summary

Order code

Marking

STS7P4LLF6

7K4L

Package

Packing

SO-8

Tape and reel

Note: For the P-channel Power MOSFET,

current polarity of voltages and current

have to be reversed.

DS10067 - Rev 3 - February 2021

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...14

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