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STS7PF30L PDF预览

STS7PF30L

更新时间: 2024-01-13 04:34:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 137K
描述
P-CHANNEL 30V - 0.016ohm - 7A SO-8 STripFET⑩ II POWER MOSFET

STS7PF30L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SO-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:8.01
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:4362Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:ST SO-8_3Samacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):7 A
最大漏极电流 (ID):7 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STS7PF30L 数据手册

 浏览型号STS7PF30L的Datasheet PDF文件第2页浏览型号STS7PF30L的Datasheet PDF文件第3页浏览型号STS7PF30L的Datasheet PDF文件第4页浏览型号STS7PF30L的Datasheet PDF文件第5页浏览型号STS7PF30L的Datasheet PDF文件第6页 
STS7PF30L  
P-CHANNEL 30V - 0.016- 7A SO-8  
STripFET™ II POWER MOSFET  
PRELIMINARY DATA  
TYPE  
V
R
DS(on)  
I
D
DSS  
STS7PF30L  
30 V  
< 0.021 Ω  
7 A  
TYPICAL R (on) = 0.016Ω  
STANDARD OUTLINE FOR EASY  
DS  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
SO-8  
DESCRIPTION  
This Power Mosfet is the latest development of ST-  
Microelectronics unique “Single Feature Size™”  
strip-based process. The resulting transistor shows  
extremely high packing density for low on-resis-  
tance, rugged avalanche characteristics and less  
critical alignment steps therefore a remarkable man-  
ufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
POWER MANAGEMENT IN CELLULAR  
PHONES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
V
A
A
A
W
GS  
V
Drain-gate Voltage (R = 20 k)  
30  
DGR  
GS  
V
Gate- source Voltage  
±20  
7
GS  
I
Drain Current (continuous) at T = 25°C  
D
C
I
Drain Current (continuous) at T = 100°C  
4.4  
28  
D
C
I
Drain Current (pulsed)  
DM  
P
TOT  
Total Dissipation at T = 25°C  
2.5  
C
() Pulse width limited by safe operating area  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
December 2002  
1/6  

STS7PF30L 替代型号

型号 品牌 替代类型 描述 数据表
STS6PF30L STMICROELECTRONICS

类似代替

P-CHANNEL 30V - 0.027 ohm - 6A SO-8 STripFET⑩
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类似代替

DUAL P-CHANNEL 60V - 0.10 ohm - 3A SO-8 STripFET MOSFET
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功能相似

30 Volt P-Channel PowerTrench MOSFET

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