STPS3L25

更新时间： 2024-09-27 22:52:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
4页	59K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS3L25 数据手册

STPS3L25S

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

3 A

25 V

Tj (max)

V_F(max)

150°C

0.44 V

FEATURES AND BENEFITS

VERY LOW FORWARD VOLTAGE DROP FOR

LESS POWER DISSIPATION

SMC

JEDEC DO-214AB

OPTIMIZED CONDUCTION/REVERSE LOSSES

TRADE-OFF WHICH MEANS THE HIGHEST

EFFICIENCY IN THE APPLICATIONS

HIGH POWER SURFACE MOUNT MINIATURE

PACKAGE

DESCRIPTION

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC con-

verters.

Packaged in SMC, this device is especially in-

tended for use as an antiparallel diode on synchro-

nous rectification freewheel MOSFET’s at the

secondary of 3.3V SMPS and DC/DC units.

ABSOLUTE RATINGS

Symbol

(limiting values)

Parameter

Value

Unit

V_RRM

I_F(RMS)RMS forward current

Repetitive peak reverse voltage

I_F(AV)

I_FSM

I_RRM

I_RSM

T_stg

Average forward current

T_L= 115°C δ = 0.5

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Storage temperature range

tp = 10 ms Sinusoidal

tp= 2 µs square F=1kHz

tp = 100 µs square

°C

- 65 to + 150

150

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

V/ s

dV/dt

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j−a)

June 1999 - Ed: 3A

1/4

12 3 4

中文翻译

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