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STPS20150CR

更新时间： 2024-02-14 00:41:37

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压高电压电源
页数	文件大小	规格书
7页	112K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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中文翻译

获取价格

数据手册

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STPS20150CR 数据手册

STPS20150CT/CG/CR/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

T_j

2 x 10 A

150 V

175°C

0.75 V

V_F(max)

FEATURES AND BENEFITS

D²PAK

STPS20150CG

■

HIGH JUNCTION TEMPERATURE CAPABILITY

I²PAK

STPS20150CR

■

GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE DROP

■

LOW LEAKAGE CURRENT

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap schottky rectifier designed for

high frequency Switched Mode Power

Supplies.

TO-220FPAB

TO-220AB

STPS20150CT

STPS20150CFP

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

150

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

Average forward current TO-220AB

δ = 0.5

D²PAK / I²PAK

Tc = 155°C Per diode

TO-220FPAB

Surge non repetitive forward current

P_ARMRepetitive peak avalanche power

Tc = 135°C Per device

tp = 10 ms sinusoidal

tp = 1µs Tj = 25°C

180

I_FSM

6700

T_stg

T_j

Storage temperature range

- 65 to + 175

175

°C

Maximum operating junction temperature

°C

dV/dt Critical rate of rise of reverse voltage

10000

V/µs

July 2003 - Ed: 6D

1/7

12 3 4 5 6 7

中文翻译

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