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STP13NK50Z PDF预览

STP13NK50Z

更新时间: 2024-02-06 08:27:06
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 519K
描述
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET

STP13NK50Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.81Is Samacsys:N
雪崩能效等级(Eas):240 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.48 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):140 W最大脉冲漏极电流 (IDM):44 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP13NK50Z 数据手册

 浏览型号STP13NK50Z的Datasheet PDF文件第9页浏览型号STP13NK50Z的Datasheet PDF文件第10页浏览型号STP13NK50Z的Datasheet PDF文件第11页浏览型号STP13NK50Z的Datasheet PDF文件第12页浏览型号STP13NK50Z的Datasheet PDF文件第13页浏览型号STP13NK50Z的Datasheet PDF文件第14页 
STx13NK50Z  
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