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STK12C68-5K55 PDF预览

STK12C68-5K55

更新时间: 2024-01-19 11:58:08
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
13页 371K
描述
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

STK12C68-5K55 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:WDIP, DIP28,.3Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:8.67最长访问时间:35 ns
其他特性:RETENTION/ENDURANCE = 10 YEARS/100000 CYCLESJESD-30 代码:R-CDIP-T28
JESD-609代码:e0长度:35.56 mm
内存密度:65536 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
输出特性:3-STATE可输出:YES
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:WDIP
封装等效代码:DIP28,.3封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
座面最大高度:4.14 mm最大待机电流:0.004 A
子类别:SRAMs最大压摆率:0.075 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

STK12C68-5K55 数据手册

 浏览型号STK12C68-5K55的Datasheet PDF文件第1页浏览型号STK12C68-5K55的Datasheet PDF文件第3页浏览型号STK12C68-5K55的Datasheet PDF文件第4页浏览型号STK12C68-5K55的Datasheet PDF文件第5页浏览型号STK12C68-5K55的Datasheet PDF文件第6页浏览型号STK12C68-5K55的Datasheet PDF文件第7页 
STK12C68  
ABSOLUTE MAXIMUM RATINGSa  
Voltage on Input Relative to VSS . . . . . . . . . .0.6V to (V + 0.5V)  
Voltage on DQ0-7 or HSB . . . . . . . . . . . . . . . .0.5V to (V + 0.5V)  
CC  
Temperature under Bias. . . . . . . . . . . . . . . . . . . . . .–55°C to 125°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .–65°C to 150°C  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
DC Output Current (1 output at a time, 1s duration) . . . . . . . 15mA  
Note a: Stresses greater than those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device. This is a  
stress rating only, and functional operation of the device at con-  
ditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rat-  
ing conditions for extended periods may affect reliability.  
Voltage on Input Relative to Ground . . . . . . . . . . . . . –0.5V to 7.0V  
CC  
DC CHARACTERISTICS  
(VCC = 5.0V ± 10%)e  
INDUSTRIAL/  
MILITARY  
COMMERCIAL  
SYMBOL  
PARAMETER  
UNITS  
NOTES  
MIN  
MAX  
MIN  
MAX  
b
I
Average V Current  
85  
75  
65  
55  
90  
75  
65  
55  
mA  
mA  
mA  
mA  
t
t
t
t
= 25ns  
= 35ns  
= 45ns  
= 55ns  
CC  
CC  
AVAV  
AVAV  
AVAV  
AVAV  
1
c
I
I
Average V Current during STORE  
3
3
mA  
All Inputs Don’t Care, V = max  
CC  
CC  
CC  
CC  
2
b
Average V Current at t  
CC  
= 200ns  
W (V – 0.2V)  
AVAV  
CC  
3
10  
10  
mA  
5V, 25°C, Typical  
All Others Cycling, CMOS Levels  
c
I
I
Average V  
Current during  
CAP  
All Inputs Don’t Care  
CC  
4
2
2
mA  
AutoStore™ Cycle  
d
Average V Current  
(Standby, Cycling TTL Input Levels)  
27  
23  
20  
19  
28  
24  
21  
19  
mA  
mA  
mA  
mA  
t
t
t
t
= 25ns, E V  
= 35ns, E V  
= 45ns, E V  
= 55ns, E V  
SB  
CC  
AVAV  
AVAV  
AVAV  
AVAV  
IH  
IH  
IH  
IH  
1
d
I
I
I
V
Standby Current  
E (V – 0.2V)  
CC  
SB  
CC  
2
1.5  
±1  
±5  
2.5  
±1  
±5  
mA  
µA  
µA  
(Standby, Stable CMOS Input Levels)  
All Others V 0.2V or (V – 0.2V)  
IN CC  
Input Leakage Current  
V
V
= max  
CC  
ILK  
= V to V  
CC  
IN  
SS  
Off-State Output Leakage Current  
V
V
= max  
CC  
OLK  
= V to V , E or G V  
IH  
IN  
SS  
CC  
V
V
V
V
V
Input Logic “1” Voltage  
2.2  
V
+ .5  
2.2  
V + .5  
CC  
V
V
All Inputs  
All Inputs  
IH  
CC  
Input Logic “0” Voltage  
V
– .5  
0.8  
V – .5  
SS  
0.8  
IL  
SS  
Output Logic “1” Voltage  
Output Logic “0” Voltage  
Logic “0” Voltage on HSB Output  
Operating Temperature  
2.4  
2.4  
V
I
I
I
=–4mA except HSB  
= 8mA except HSB  
= 3mA  
OH  
OL  
BL  
OUT  
OUT  
OUT  
0.4  
0.4  
70  
0.4  
0.4  
V
V
T
0
–40/-55  
85/125  
°C  
A
Note b: ICC and ICC are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.  
Note c: ICC1 and ICC3 are the average currents required for the duration of the respective STORE cycles (tSTORE ).  
4
Note d: E 2VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out.  
Note e: VCC reference levels throughout this datasheet refer to VCCX if that is where the power supply connection is made, or VCAP if VCCX is con-  
nected to ground.  
AC TEST CONDITIONS  
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 3V  
5.0V  
Input Rise and Fall Times. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5ns  
Input and Output Timing Reference Levels . . . . . . . . . . . . . . . 1.5V  
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1  
480 Ohms  
OUTPUT  
30 pF  
CAPACITANCEf  
(TA = 25°C, f = 1.0MHz)  
255 Ohms  
INCLUDING  
SCOPE AND  
FIXTURE  
SYMBOL  
PARAMETER  
MAX  
UNITS  
CONDITIONS  
V = 0 to 3V  
V = 0 to 3V  
C
C
Input Capacitance  
Output Capacitance  
8
7
pF  
IN  
pF  
OUT  
Note f: These parameters are guaranteed but not tested.  
Figure 1: AC Output Loading  
October 2003  
2
Document Control # ML0008 rev 0.4  
 
 
 
 

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