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STK11C68-C45 PDF预览

STK11C68-C45

更新时间: 2024-02-10 10:58:55
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器内存集成电路
页数 文件大小 规格书
18页 1506K
描述
Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, MO-058, DIP-28

STK11C68-C45 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP28,.3针数:28
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.23
Is Samacsys:N最长访问时间:45 ns
其他特性:SOFTWARE STORE/RECALL; RETENTION/ENDURANCE-10YEARS/10000 CYCLESJESD-30 代码:R-CDIP-T28
JESD-609代码:e0长度:35.56 mm
内存密度:65536 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
输出特性:3-STATE可输出:YES
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装等效代码:DIP28,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
座面最大高度:4.14 mm最大待机电流:0.002 A
子类别:SRAMs最大压摆率:0.075 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

STK11C68-C45 数据手册

 浏览型号STK11C68-C45的Datasheet PDF文件第2页浏览型号STK11C68-C45的Datasheet PDF文件第3页浏览型号STK11C68-C45的Datasheet PDF文件第4页浏览型号STK11C68-C45的Datasheet PDF文件第5页浏览型号STK11C68-C45的Datasheet PDF文件第6页浏览型号STK11C68-C45的Datasheet PDF文件第7页 
STK11C68  
64-Kbit (8 K × 8) SoftStore nvSRAM  
Features  
Functional Description  
25 ns, 35 ns, and 45 ns access times  
Pin compatible with industry standard SRAMs  
Software initiated nonvolatile STORE  
Unlimited Read and Write endurance  
Automatic RECALL to SRAM on power up  
Unlimited RECALL cycles  
The Cypress STK11C68 is a 64Kb fast static RAM with a nonvol-  
atile element in each memory cell. The embedded nonvolatile  
elements incorporate QuantumTrap technology producing the  
world’s most reliable nonvolatile memory. The SRAM provides  
unlimited read and write cycles, while independent nonvolatile  
data resides in the highly reliable QuantumTrap cell. Data  
transfers under software control from SRAM to the nonvolatile  
elements (the STORE operation). On power up, data is automat-  
ically restored to the SRAM (the RECALL operation) from the  
nonvolatile memory. RECALL operations are also available  
under software control.  
1,000,000 STORE cycles  
100 year data retention  
For a complete list of related documentation, click here.  
Single 5 V+10% operation  
Commercial and industrial temperature  
28-pin (330 mil) SOIC package  
28-pin (300 mil) CDIP and 28-pad (350 mil) LCC packages  
RoHS compliance  
Logic Block Diagram  
V
CC  
V
CAP  
Quantum Trap  
128 X 512  
A5  
POWER  
STORE  
CONTROL  
A6  
A7  
A8  
RECALL  
STORE/  
RECALL  
CONTROL  
STATIC RAM  
ARRAY  
128 X 512  
HSB  
A9  
A11  
A12  
SOFTWARE  
DETECT  
A0  
-
A12  
DQ0  
COLUMN I/O  
DQ1  
DQ2  
DQ3  
COLUMN DEC  
DQ4  
DQ5  
DQ6  
DQ7  
A0  
A4  
A10  
A1  
A3  
A2  
OE  
CE  
WE  
Cypress Semiconductor Corporation  
Document Number: 001-50638 Rev. *F  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised March 24, 2015  

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