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STGIB8CH60TS-XZ PDF预览

STGIB8CH60TS-XZ

更新时间: 2023-12-20 18:46:09
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
24页 2963K
描述
SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs

STGIB8CH60TS-XZ 数据手册

 浏览型号STGIB8CH60TS-XZ的Datasheet PDF文件第3页浏览型号STGIB8CH60TS-XZ的Datasheet PDF文件第4页浏览型号STGIB8CH60TS-XZ的Datasheet PDF文件第5页浏览型号STGIB8CH60TS-XZ的Datasheet PDF文件第7页浏览型号STGIB8CH60TS-XZ的Datasheet PDF文件第8页浏览型号STGIB8CH60TS-XZ的Datasheet PDF文件第9页 
STGIB8CH60TS-XZ  
Electrical characteristics  
3
Electrical characteristics  
TJ = 25 °C unless otherwise specified.  
Inverter part  
3.1  
Table 6. Static  
Symbol  
Parameter  
Test conditions  
= 600 V, V = V = 15 V  
Min.  
Typ.  
Max.  
Unit  
I
V
V
Collector cut-off current  
-
100  
µA  
CES  
CE  
CC  
boot  
= V  
= 15 V, V (1) = 0 to 5 V,  
CC  
boot  
IN  
-
-
1.68  
1.91  
2.18  
I
= 8 A  
= V  
C
Collector-emitter saturation  
voltage  
V
V
CE(sat)  
V
= 15 V, V (1) = 0 to 5 V,  
CC  
boot  
IN  
I
= 12 A  
C
V
IN  
V
IN  
= 0 V, I = 8 A  
-
-
1.55  
1.70  
2.10  
V
V
C
V
Diode forward voltage  
F
= 0 V, I = 12 A  
C
1. Applied among HINx, LINx and GND for x = U, V, W.  
Table 7. Inductive load switching time and energy  
Symbol  
Parameter  
Turn-on time  
Test conditions  
Min.  
Typ.  
280  
142  
400  
85  
Max.  
Unit  
(1)  
t
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
on  
(1)  
t
Crossover time on  
c(on)  
(1)  
t
ns  
Turn-off time  
off  
(1)  
V
V
= 300 V, V = V  
= 15 V,  
boot  
t
Crossover time off  
DD  
CC  
c(off)  
(2) = 0 to 5 V, I = 8 A  
IN  
C
t
Reverse recovery time  
Turn-on switching energy  
Turn-off switching energy  
Reverse recovery energy  
Turn-on time  
215  
201  
102  
8.1  
rr  
E
on  
E
µJ  
ns  
µJ  
off  
E
rr  
(1)  
t
300  
175  
380  
85  
on  
(1)  
t
Crossover time on  
c(on)  
(1)  
t
Turn-off time  
off  
(1)  
V
V
= 300 V, V = V  
= 15 V,  
boot  
t
Crossover time off  
DD  
CC  
c(off)  
(2) = 0 to 5 V, I = 12 A  
IN  
C
t
Reverse recovery time  
Turn-on switching energy  
Turn-off switching energy  
Reverse recovery energy  
220  
340  
160  
10.2  
rr  
E
on  
E
off  
E
rr  
1.  
t
and t include the propagation delay times of the internal drive. t  
and t are the switching times of the IGBT itself  
C(off)  
on  
off  
C(on)  
under the internally given gate driving conditions.  
2. Applied among HINx, LINx and GND for x = U, V, W.  
DS13863 - Rev 1  
page 6/24  
 
 
 
 
 

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